High-responsivity silicon p-i-n mesa-photodiode

被引：8

作者：

Kukurudziak, M. S. ^{[1
,2
]}

Maistruk, E., V ^{[1
]}

机构：

[1] Yuri Fedkovych Chernivtsi Natl Univ, Dept Elect & Power Engn, Chernovtsy, Ukraine

[2] Rhythm Optoelect Shareholding Co, Engn Prod Complex 1, Chernovtsy, Ukraine

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2023年 / 38卷 / 08期

关键词：

photodiode; mesa-structure; responsivity; photoresist; dark current; LAYER;

D O I：

10.1088/1361-6641/acdf14

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon p-i-n mesa-photodiodes have been made. Different variants of masking coating during etching of the mesa-profile have been studied. Comparative characteristic of photodetectors manufacture by planar- and mesa-technology have been carried out. Defect formation on the surface of silicon substrates in different options of technology was investigated. Parameters of photodiodes manufactured by planar and meso-technology were investigated. Photodiodes with a meso-structure have higher responsivity and lower capacitance than samples made by conventional planar technology.

引用

页数：9

共 30 条

[1] Correcting the Characteristics of Silicon Photodiodes by Ion Implantation [J].

Asadchikov, V. E. ;

Dyachkova, I. G. ;

Zolotov, D. A. ;

Chukhovskii, F. N. ;

Nikitina, E. V. .

SEMICONDUCTORS, 2020, 54 (06) :666-671

[2]

Bagraev NT, 2021, SEMICONDUCTORS+, V55, P137, DOI [10.1134/S106378262102007X, 10.21883/FTP.2021.02.50493.9538]

[3]

Boltar K. O., 2013, Applied Physics, P10

[4]

ckb-rhythm, PASSP DAT PD 15M 01

[5]

excelitas, PASSP DAT YAG 555 4

[6]

Fedorenko A V., 2020, TEKHNOL KONSTR ELEKT, V34, P17, DOI [10.15222/TKEA2020.3-4.17, DOI 10.15222/TKEA2020.3-4.17]

[7]

first-sensor, PASSP DAT QP154 Q

[8]

frast, PASSP DAT FP 383 FP

[9] High-Speed High-Efficiency Photon-Trapping Broadband Silicon PIN Photodiodes for Short-Reach Optical Interconnects in Data Centers [J].

Ghandiparsi, Soroush ;

Elrefaie, Aly E. ;

Mayet, Ahmed S. ;

Landolsi, Taha ;

Bartolo-Pereze, Cesar ;

Cansizoglu, Hilal ;

Gao, Yang ;

Mamtaz, Hasina H. ;

Golgir, Hossein Rabiee ;

Devine, Ekaterina Ponizovskaya ;

Yamada, Toshishige ;

Wang, Shih-Yuan ;

Islam, M. Saif .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2019, 37 (23) :5748-5755

[10] Role of surface passivation in integrated sub-bandgap silicon photodetection [J].

Gherabli, Rivka ;

Grajower, Meir ;

Shappir, Joseph ;

Mazurski, Noa ;

Wofsy, Menachem ;

Inbar, Naor ;

Khurgin, Jacob B. ;

Levy, Uriel .

OPTICS LETTERS, 2020, 45 (07) :2128-2131

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