The construction of versatile terahertz metamaterial having tunable dual-band electromagnetically induced transparency based on two falling asymmetric T-shaped graphene resonators

被引:14
作者
Duan, Guiyuan [1 ]
Chen, Yuxuan [1 ]
Zhu, Huaxin [1 ]
Zhang, Xiangyang [1 ]
Zhou, Haiquan [2 ]
Xiong, Han [3 ]
Xu, Nianxi [4 ]
Wang, Ben-Xin [1 ]
机构
[1] Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
[2] Zhejiang Beyondsun Green Energy Technol Co Ltd, Huzhou 313008, Peoples R China
[3] Chongqing Univ, Sch Elect Engn, Chongqing 400044, Peoples R China
[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Opt Syst Adv Mfg Technol, Changchun 130033, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Terahertz metamaterials; Graphene resonator; Electromagnetically induced transparency; Tunable properties; Slow light and sensing; ANALOG;
D O I
10.1016/j.optlastec.2024.110545
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The combination of graphene and metamaterials has played an important role in studying tunable terahertz functional devices, with electromagnetically induced transparency (EIT) being one of the typical examples. In this work, we present a versatile terahertz meta-device consisting of two asymmetric T-shaped graphene resonators, which could produce a dual -band EIT effect. The strong interaction between the two T-shaped graphene resonators leads to a dual -band EIT effect, and the electric field and surface current distributions are provided to reveal their generation mechanisms. Results also indicate that the dual -band EIT effect is not only influenced by size variations of T-shaped graphene resonators themselves, but also strongly depends on the Fermi energy levels they utilized. Interestingly, multi-frequency switching with a maximum modulation depth of 85.13 % could be further realized when the Fermi energy levels are precisely controlled. The group delay near two transmission peaks can reach 2.87 ps and 4.20 ps, which is important for the study of slow light devices. Besides, the sensitivity of the graphene-based dual -band EIT device as a sensor reaches 109 GHz & sdot;RIU-1 and 145 GHz & sdot;RIU- 1, indicating that the design has excellent sensing performance and is expected to be useful for the detection of biomolecules in biochemistry, medicine and other industries.
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页数:8
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