Epitaxial Grown VO2 with Suppressed Hysteresis and Low Room Temperature Resistivity for High-Performance Thermal Sensor Applications

The ability of VO2 to undergo semiconductor-to-metal phase transition (SMT) upon heating makes it a very attractive material for uncooled bolometers. The SMT of VO2 represents a large temperature coefficient of resistance, which is an important parameter for the development of highly responsive microbolometers. However, other characteristics of the SMT of VO2 such as its high transition temperature (341.2 K), the sharpness of the transition, its hysteresis, and the high room temperature resistivity limit the performance of this material in microbolometers. In this work, we grow a high-quality epitaxial ultrathin film VO2 on c-plane Al2O3 by pulsed laser deposition. The low deposition temperature and tuning the oxygen partial pressure during the growth process enable control over the grain size and oxygen vacancy concentration. This allowed controlling the SMT parameters of the samples. In particular, we show that the high density of grain boundaries associated with nanosized grains suppresses the thermal hysteresis of the SMT. Simultaneous control over the density of oxygen vacancies and the size of grains enables the adjustment of the temperature coefficient of resistance, room temperature resistivity, SMT temperature, sharpness, and thermal hysteresis toward suitable values for the fabrication of efficient VO2-based uncooled bolometers. Compared with other VO2 fabrication methods, this approach can be viewed as a simpler alternative for VO2 fabrication with favorable properties for practical bolometer applications.