Phase transformation pre-treatment of diamond wire-sawn multi-crystalline silicon wafers for metal-assisted chemical etching of solar cells

被引:4
作者
Zhang, Jinbing [1 ]
Zhou, Xiaoying [2 ]
Hu, Dongli [1 ,3 ]
Yuan, Shuai [3 ,4 ]
Cai, Erhui [5 ]
机构
[1] NingboTech Univ, Sch Mat Sci & Engn, Ningbo 315100, Peoples R China
[2] NingboTech Univ, Sch Biol & Chem Engn, Ningbo 315100, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[4] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
[5] Ningbo Ul Solar Co Ltd, Ningbo 315100, Peoples R China
关键词
Diamond wire saw; Crystalline silicon wafer; Phase transformation; Metal -assisted chemical etching; BLACK SILICON; PERFORMANCE;
D O I
10.1016/j.surfin.2022.102574
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Phase transformation by the heat treatment, prior to metal-assisted chemical etching (MACE) of solar cells, has been proposed and studied, as a pre-treatment approach for diamond wire sawn (DWS) Si wafers. The results of the study show that the phase transformation pre-treatment can modify the microstructure of amorphous Si surface layers of DWS multi-crystalline (mc) Si wafers. The modified surface layer proved to be more reactive to the chemical etching solution, which was the primary factor for the improvement in the treated solar cells. A significant improvement on the surface uniformity and morphology of the textured Si wafer was achieved, subsequent to the pre-treatment, during the MACE texturization process. These solar cells based on the treated DWS mc-Si wafers displayed a gain of about 0.18% (absolute value), in the overall photoelectric conversion efficiency (eta), when compared to the solar cells of the same batch, for the untreated wafers, on the same pro-duction line. It is hence, proven that this pre-treatment method, when used as a supplementary technique to the wet-chemical texturization process, has great potential as an effective application technology for solar cells based on DWS mc-Si wafers.
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页数:8
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