Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition-Assisted WO3 Thin Films

被引:0
作者
Lamichhane, Shiva [1 ]
Sharma, Savita [2 ]
Tomar, Monika [3 ,4 ]
Chowdhuri, Arijit [5 ]
机构
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[2] Univ Delhi, Dept Phys, Miranda House, Delhi 110007, India
[3] Univ Delhi, Kalindi Coll, Phys Dept, Delhi 110008, India
[4] Univ Delhi, Inst Eminence, Delhi 110007, India
[5] Univ Delhi, Acharya Narendra Dev Coll, New Delhi 110019, India
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2023年 / 220卷 / 20期
关键词
annealing; nonvolatile memory (NVM); radio frequency (RF) magnetron sputtering; thin films; unipolar resistive switching; WO3; nanostructured; RESISTANCE;
D O I
10.1002/pssa.202300358
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Herein, the impact of postdeposition annealing on resistive switching behavior of radio frequency magnetron sputtered WO3 thin films is reported. Films are deposited under glancing angle deposition (GLAD) configuration of sputtering at varying GLAD angle from 65 degrees to 80 degrees. Structure transition from monoclinic to orthorhombic phase in deposited WO3 films is perceived after ex situ annealing at temperature of 400 degrees C. Resistive switching properties show shift from bipolar to unipolar switching on postdeposition annealing. WO3 films show unipolar switching behavior after ex situ annealing for all prepared samples. The value of resistance in high resistance state is lowered after ex situ heating treatment and interestingly switching voltage also reduces to 3 V from 7 V after annealing treatment. The ratio of high to low resistance state for annealed WO3 film fabricated at 70 degrees GLAD angle is achieved to be maximum (approximate to 219). A detailed charge transport mechanism shows that ohmic behavior is dominant current conduction mechanism at lower applied voltage, while space charge limited current and Child's law are dominant at higher applied voltages. Obtained results encourage utilization of prepared WO3 thin films toward a wide variety of applications in optoelectronics, microelectronics, and environmental engineering along with advanced electronics such as resistive memory devices.
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页数:10
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