A High SNR Global Shutter CMOS Image Sensor Technology for High Precision Absorption Imaging Applications

被引：0
作者：
Oikawat, Tetsu [1 ]
Kuroda, Rihito [1 ,2 ]
Hamaya, Aoi [1 ]
Shiba, Yoshinobu [2 ,3 ]
Inada, Takafumi [2 ,3 ]
Sakai, Yushi [2 ,3 ]
Shirai, Yasuyuki [2 ]
Sugawa, Shigetoshi [2 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Sendai, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sapporo, Japan
[3] Fujikin Inc, Osaka, Japan
来源：
ITE TRANSACTIONS ON MEDIA TECHNOLOGY AND APPLICATIONS | 2024年 / 12卷 / 02期
关键词：
Absorption imaging; CMOS image sensor; Signal to noise ratio (SNR); Global shutter; Fluid concentration distribution;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, a high SNR global shutter CMOS image sensor technology for high precision imaging and analysis and its application for absorbance spectroscopy are discussed including technical requirements and future directions. Also presented is the developed high SNR voltage domain global shutter image sensor with sensitivity in wide wavelength range for absorption imaging. The fabricated chip achieved 69.7 dB maximum SNR and 1000 fps maximum SNR and successfully captured concentration distribution of NO2 gas in semiconductor manufacturing chamber owing to its high SNR and high framerate.
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收藏
页码：167 / 174
页数：8
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