Structural and electrical investigation of BLT films deposited at different times using electron beam evaporation technique

被引：2

作者：

Abdallah, Bassam ^{[1
]}

Nasrallah, Fareza ^{[1
]}

Obied, Asmahan ^{[1
]}

机构：

[1] Atom Energy Commiss, Dept Phys, POB 6091, Damascus, Syria

来源：

OPTOELECTRONICS LETTERS | 2023年 / 19卷 / 06期

关键词：

A; THIN-FILMS; THICKNESS; SI;

D O I：

10.1007/s11801-023-2004-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Thin films Bi4Ti3O12 (BLT) were deposited using electron beam evaporation on silicon substrate at several times, also on AlN/Si and SiO2/Si substrates. Thin films morphology and thickness were measured via scanning electron microscopy (SEM). The crystallography was studied using X-ray diffraction (XRD) technique for films which have a (0010) preferred orientation in all substrate types. The capacitance values were contingent on frequency value in C-V measurement. The ferroelectric characterization was investigated for BLT film deposited on isolator layer (SiO2 or AlN) for Al/Bi4Ti3O12/SiO2/Si devices. Memory effect value varied from 1 V to 3 V depending on the thin films isolator on substrate.

引用

页码：347 / 352

页数：6

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