Giant spin-Hall and tunneling magnetoresistance effects based on a two-dimensional nonrelativistic antiferromagnetic metal

被引:30
作者
Cui, Qirui [1 ,2 ,3 ]
Zhu, Yingmei [1 ]
Yao, Xiong [1 ]
Cui, Ping [1 ,3 ]
Yang, Hongxin [1 ,2 ]
机构
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Yongjiang Lab, Ningbo 315202, Peoples R China
基金
中国国家自然科学基金;
关键词
ROOM-TEMPERATURE; FERROMAGNETISM; MONOLAYER; CRYSTAL;
D O I
10.1103/PhysRevB.108.024410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The emergence of nonrelativistic band spin splitting in fully compensated collinear antiferromagnets provides an intriguing platform for investigating nontrivial spin-dependent phenomena. Here, we explore the relationship between magnetic symmetry and electronic states of two-dimensional (2D) antiferromagnets and demonstrate that nonrelativistic and giant band spin splitting and topological electronic features emerge in room-temperature antiferromagnetic metal V2Te2O that is sufficiently stable to be exfoliated from the layered compound. More interestingly, the anisotropic spin-momentum coupling of monolayer V2Te2O gives rise to the spin-Hall effect where the spin-charge conversion ratio is expected to be over 30%, and two fully spin-polarized and separated conduction channels with opposite spin polarization make it an ideal candidate for an electrode that is applied in the antiferromagnetic tunneling junction with large magnetoresistance. Our work elucidates the unexplored potential of 2D antiferromagnetic metals with nonrelativistic band spin splitting for their practical applications in spintronics.
引用
收藏
页数:9
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