Niobium telluride absorber for a mode-locked vector soliton fiber laser

被引:76
|
作者
Shang, XinXin [1 ]
Xu, NanNan [1 ]
Guo, Jia [2 ]
Sun, Shuo [3 ]
Zhang, HuaNian [3 ]
Wageh, S. [4 ]
Al-Ghamdi, Ahmed A. [4 ]
Zhang, Han [2 ]
Li, DengWang [1 ]
机构
[1] Shandong Normal Univ, Sch Phys & Elect, Shandong Prov Key Lab Med Phys & Image Proc Techno, Shandong Prov Key Lab Opt & Photon Device, Jinan 250014, Peoples R China
[2] Shenzhen Univ, Inst Microscale Optoelect, Coll Phys & Optoelect Engn, Collaborat Innovat Ctr Optoelect Sci & Technol,Min, Shenzhen 518060, Peoples R China
[3] Shandong Univ Technol, Sch Phys & Optoelect Engn, Zibo 255049, Peoples R China
[4] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah 21589, Saudi Arabia
基金
中国国家自然科学基金;
关键词
niobium telluride; saturable absorber; mode-locked pulse; fiber laser; SATURABLE ABSORBER; DISSIPATIVE SOLITONS; OPTICAL-PROPERTIES; NANOSHEETS; GRAPHENE; LOCKING; ABSORPTION; NBTE2; OXIDE;
D O I
10.1007/s11433-022-2058-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Niobium telluride (NbTe2), an emerging transition metal dichalcogenide material, has been theoretically predicted to have nonlinear absorption properties and excellent optical response. However, only a few studies of the utilization of NbTe2 in ultrafast photonics have been reported. In this work, a NbTe2-based saturable absorber (SA) was applied in an erbium-doped fiber as a mode-locked device, and a vector soliton based on NbTe2 was obtained for the first time. NbTe2-PVA film SA was successfully prepared by the liquid-phase exfoliation and spin coating methods, with a modulation depth of up to 10.87%. The nonlinear absorption coefficient of NbTe2-based SA film tested through the open-aperture Z-scan laser measurement is 0.62 x 10 (-11) m/W. A conventional soliton with a pulse duration of 858 fs was generated using NbTe2-based SA, which was demonstrated to be a kind of polarization-locked vector soliton in further investigation. Our experimental results reveal the nonlinear optical properties of NbTe2 and broaden its applications in ultrafast photonic devices.
引用
收藏
页数:9
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