Acquiring high-performance and commercially available carbon based air-stable perovskite solar cells by using ZnBr2 additive

被引:8
作者
Jing, Yanwen [1 ]
Lv, Yanqi [1 ]
Wang, Ke [1 ]
Xu, Zhimin [1 ]
Zhou, Xingfu [1 ]
机构
[1] Nanjing Tech Univ, Coll Chem & Chem Engn, State Key Lab Mat Oriented Chem Engn, Nanjing, Peoples R China
基金
中国国家自然科学基金;
关键词
Carbon-based perovskite solar cells; Zinc(II) bromide; Hysteresis; Defect state; Air stability; J-V HYSTERESIS; HIGH-EFFICIENCY; HALIDE PEROVSKITES; TIO2; NANORODS; INTERFACE; TRANSPORT; ELIMINATION; STABILITY; MAPBI(3); CUSCN;
D O I
10.1016/j.jallcom.2022.167445
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The organic-inorganic perovskite solar cells (PSCs) have recently attracted significant attention owing to their remarkable photovoltaic performance. Herein, we fabricate a novel perovskite absorber Cs0.05(FA0.83MA0.17)0.95Pb1-xZnx(I0.83Br0.17)3 by using ZnBr2 as an additive. The introduction of zinc increases the grain size and reduces the grain boundary defects. At the optimized concentration of 0.5 mol% ZnBr2 additive, the x-ray diffraction (XRD) shows the perfect crystallization of the perovskite film. The enhanced crystallization of the perovskite structure suppresses the non-radiative recombination loss and prolongs the carrier lifetime. The optimized PSC presents a champion power conversion efficiency (PCE) of 15.64 % and shows a negligible hysteresis effect. Moreover, the increased built-in electric field (Vbi) between the n-type Zn doped perovskite and the p-type CuSCN creates more driving force for the separation of photogenerated carriers and increases the open-circuit photovoltage (Voc) of the device. The unencapsulated device maintains more than 87 % of its original PCE after aging for 90 days in the ambient condition, while the control device can only maintain 60 % of its original PCE. These results suggest that the simple B-site iondoped perovskite could be a good option for the future improvement of PSCs.(c) 2022 Elsevier B.V. All rights reserved.
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页数:12
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