Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

被引：0

作者：

Babichev, A. V. ^{[1
]}

Nadtochiy, A. M. ^{[2
,3
]}

Tkach, Yu. S. ^{[1
]}

Kryzhanovskaya, N. V. ^{[2
,3
]}

Blokhin, S. A. ^{[1
]}

Nevedomsky, V. N. ^{[1
]}

Gladyshev, A. G. ^{[4
]}

Maleev, N. A. ^{[1
]}

Karachinsky, L. Ya. ^{[4
]}

Novikov, I. I. ^{[4
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

[3] Natl Res Univ Higher Sch Econ, St Petersburg, Russia

[4] ITMO Univ, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

molecular-beam epitaxy; metal-organic chemical vapor deposition; gallium arsenide; InGaAs; Stranski-Krastanov growth mode; OPTICAL-PROPERTIES; ARRAY;

D O I：

10.18721/JPM.163.208

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The comparative studies of optical and structural properties of InGaAs/GaAs quantum dots grown in Stranski-Krastanov growth mode by molecular-beam epitaxy and metal-organic chemical vapor deposition is presented. An analysis of the photoluminescence at ultralow pump levels resulted that the quantum dots ensemble grown by metal-organic chemical vapor deposition exhibits photoluminescence corresponding to quantum dots ground state and at the same time ensemble of quantum dots grown by molecular-beam epitaxy demonstrates the bimodal behavior which can be explained by the presence of two characteristic ensembles of InGaAs/GaAs quantum dots with different sizes and different peaks of photoluminescence. The results on InGaAs/GaAs quantum dots studying by transmission electron microscopy are and discussed as well.

引用

页码：50 / 55

页数：6

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