Defect characteristics of cadmium oxide nanocrystallites synthesized via a chemical precipitation method

被引:8
作者
Ahmed, Maudud [1 ,3 ]
Mukherjee, Shubharaj [1 ,3 ]
Singha, Tukai [2 ,3 ]
Nambissan, P. M. G. [1 ,3 ]
机构
[1] Saha Inst Nucl Phys, Appl Nucl Phys Div, Kolkata 700064, India
[2] Saha Inst Nucl Phys, Surface Phys & Mat Sci Div, Kolkata 700064, India
[3] Homi Bhabha Natl Inst, Anushaktinagar, Mumbai 400094, India
关键词
Defects; Optical absorption; Positron annihilation; Vacancies; Wide band gap semiconductors; VACANCY-TYPE DEFECTS; POSITRON-ANNIHILATION; OPTICAL-PROPERTIES; CDO; EVOLUTION; DIFFUSION; LIFETIME;
D O I
10.1016/j.jpcs.2023.111513
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, we synthesized cadmium oxide nanocrystallites measuring 16 nm-30 nm via a chemical precipitation method at synthesis temperatures ranging from 400 degrees C to 800 degrees C. X-ray diffraction analysis identified well-defined peaks with no indication of mixed or impurity phases. The samples were also characterized by transmission electron microscopy. The band gap energies measured by optical absorption varied between 2.32 eV and 2.38 eV, thereby indicating quantum confinement effects over the entire range of nanocrystallite sizes. Fourier transform-infrared spectroscopic measurements demonstrated the localized surface plasmonic resonance behavior of the samples. Positron annihilation studies were conducted to identify and quantify the vacancy type defects, sizes, and concentrations. Increased annihilation of positrons occurred on the surfaces of nanocrystallites with dimensions less than the thermal diffusion length of positrons (similar to 25.4 nm). In crystallites larger than this limit, positrons were trapped in the non-stoichiometric defects within the crystallites, as demonstrated by both the positron lifetime and coincidence Doppler broadening measurements. Defects played a major role in determining the favorable properties of these cadmium oxide nanocrystallites because defects and parameters such as the synthesis temperature were strongly correlated.
引用
收藏
页数:11
相关论文
共 46 条
[31]   High-temperature electronics - A role for wide bandgap semiconductors? [J].
Neudeck, PG ;
Okojie, RS ;
Chen, LY .
PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1065-1076
[32]   PALM: A new program for the evaluation of positron lifetime spectra [J].
Olsen, J. V. ;
Kirkegaard, P. ;
Pedersen, N. J. ;
Eldrup, M. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 10, 2007, 4 (10) :4004-+
[33]   Optoelectronic properties of CdO/Si photodetectors [J].
Ortega, M ;
Santana, G ;
Morales-Acevedo, A .
SOLID-STATE ELECTRONICS, 2000, 44 (10) :1765-1769
[34]   The Scherrer formula for x-ray particle size determination [J].
Patterson, AL .
PHYSICAL REVIEW, 1939, 56 (10) :978-982
[35]  
Pecharsky V.K., 2009, Fundamentals of powder diffraction and structural characterization of materials English, DOI [10.1007/978-0-387-09579-0, DOI 10.1007/978-0-387-09579-0]
[36]  
Phillips Dane J., 2009, Proceedings of the SPIE - The International Society for Optical Engineering, V7311, DOI 10.1117/12.818741
[37]  
Planson D, 2014, INT SEMICONDUCT CON, P35, DOI 10.1109/SMICND.2014.6966383
[38]   INFRARED AND RAMAN-SPECTRA OF CDO [J].
POPOVIC, ZV ;
STANISIC, G ;
STOJANOVIC, D ;
KOSTIC, R .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1991, 165 (02) :K109-K112
[39]   Structural and optical properties of Zn doped CdO nanoparticles synthesized by chemical precipitation method [J].
Ravichandran, A. T. ;
Xavier, A. Robert ;
Pushpanathan, K. ;
Nagabhushana, B. M. ;
Chandramohan, R. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (03) :2693-2700
[40]   INFRARED-ABSORPTION BY COUPLED SURFACE-PHONON SURFACE-PLASMON MODES IN MICROCRYSTALS OF CDO [J].
RIEDER, KH ;
ISHIGAME, M ;
GENZEL, L .
PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (10) :3804-+