Current-voltage characteristics of a Co/Ni bilayer nanofilm

被引:0
|
作者
Khmelinskii, Igor [1 ]
Makarov, Vladimir [2 ]
机构
[1] Univ Algarve, FCT DQB & CEOT, P-8005139 Faro, Portugal
[2] Univ Puerto Rico, Rio Piedras Campus,POB 23343, San Juan, PR 00931 USA
关键词
Co; Ni bilayer nanofilm; Current -voltage characteristics; Semiconductor; Metal thin film; QUANTUM CONFINEMENT; GOLD;
D O I
10.1016/j.jpcs.2022.111049
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Widespread interest in optical and electrical properties of nanostructured systems began more than 20 years ago. Here, optical and electrical properties of Co/Ni bilayer nanofilms are explored. These optical and electrical properties were described in terms of a common confined wavefunction spanning both Co and Ni layers. The effective relative electron mass parameter f estimated for this bilayer film was about 0.1489. Temperature dependence of the current-voltage characteristics of the Co/Ni bilayer nanofilms was described as that of a Schottky diode with the Schottky barrier height of US = 24 cm-1, very small compared to other semiconducting materials. Therefore, Co/Ni bilayer nanofilms apparently had semiconducting properties, which may approxi-mately be described using Schottky diode theory. Such semiconducting properties of bilayer metal nanofilms could be used in special low-temperature low-consumption electronic devices.
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页数:4
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