Amorphous Fe2O3 has special high electrochemical performance as anode materials of LIBs due to its disorderly arranged atoms. However, the issue of its low intrinsic electric conductivity should be solved rationally and facilely. In this work, amorphous Fe2O3 porous films are chemically deposited on the mechanically exfoliated multilayer graphene (MLG) nanosheets, forming a Fe2O3/MLG/Fe2O3 sandwich nanostructure. The addition of 10mg of EDTA-2Na is crucial for the formation of amorphous nature and holes in Fe2O3 films on MLG. This composite exhibits better electrochemical performance as LIB anodes than well-crystallized Fe2O3 nanoparticles, amorphous Fe2O3 films without holes and amorphous Fe2O3 isolated nanoparticles on MLG, which are prepared using 0mg, 5mg, 20mg of EDTA-2Na, respectively. The optimized composite delivers a reversible discharge capacity of 1067mAh g(-1) at 100mA g(-1) after 100 cycles. Moreover, a capacity of 522 mAh g(-1) is delivered at a high current density of 2A g(-1). The high electrochemical performance of the composite is attributed to the amorphous nature and porous film structure of Fe2O3, and well combination of Fe2O3 and highly conductive MLG substrate.
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Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Chen, Jizhang
Xu, Junling
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Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Xu, Junling
Zhou, Shuang
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Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Zhou, Shuang
Zhao, Ni
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Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaChinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Zhao, Ni
Wong, Ching-Ping
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Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAChinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
机构:
Fudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R China
Fudan Univ, Collaborat Innovat Ctr Chem Energy Mat iChem, Shanghai 200438, Peoples R ChinaFudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R China
Wang, Lei
Zhang, Jie
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Fudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R China
Fudan Univ, Collaborat Innovat Ctr Chem Energy Mat iChem, Shanghai 200438, Peoples R ChinaFudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R China
Zhang, Jie
Wang, Min
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Fudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R China
Fudan Univ, Collaborat Innovat Ctr Chem Energy Mat iChem, Shanghai 200438, Peoples R ChinaFudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R China
Wang, Min
Che, Renchao
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Fudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R ChinaFudan Univ, Dept Mat Sci, Lab Adv Mat, Shanghai 200438, Peoples R China