Composition-Dependent High-Performance Phototransistors Based on Solution Processed CH3NH3PbI3/ZnO Heterostructures

被引:6
作者
Haque, Farjana [1 ]
Hasan, Md Mehedi [1 ]
Bestelink, Eva [2 ]
Sporea, Radu A. [2 ]
Mativenga, Mallory [1 ]
机构
[1] Kyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea
[2] Univ Surrey, Adv Technol Inst, Dept Elect & Elect Engn, Guildford GU2 7XH, England
关键词
heterostructure; methylammonium lead iodide; perovskite; phototransistor; organic-inorganic; solution process; zinc oxide; EXCESS LEAD IODIDE; SOLAR-CELLS; PEROVSKITE PHOTOTRANSISTOR; PHOTOVOLTAIC PERFORMANCE; ELECTRONIC-STRUCTURE; PHOTODETECTORS; PBI2; NANOPARTICLES;
D O I
10.1002/adom.202300367
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, hybrid organic-inorganic perovskites have emerged as promising photo-sensing materials for next-generation solution-processed phototransistors, achieving high responsivity, detectivity, and fast response. Here, a phototransistor that can detect visible light using a low-cost, solution processed methylammonium lead iodide/zinc oxide (CH3NH3PbI3/ZnO) heterostructure is reported. While typical ZnO thin-film transistors (TFTs) do not show any photocurrent under visible light illumination, CH3NH3PbI3 (MAPbI(3)) coated ZnO TFTs exhibit substantial photocurrent. Additionally, the optical, morphological, and structural characteristics of the light-absorbing layers are further controlled by altering the precursor ratio of methylammonium iodide and lead (II) iodide (MAI:PbI2), which in turn affects the photosensitivity. Stoichiometric composition (MAI:PbI2 = 1:1) of MAPbI(3) demonstrates optimal characteristics with a responsivity of 234 A/W and a high detectivity of 3.74 x 10(13) Jones under white light illumination. The high photo-responsivity and detectivity result from the combination of the suitable optoelectronic properties of the stoichiometric MAPbI(3) film and its smooth interface with the ZnO channel.
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页数:11
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