Microstructure and cation distribution of Mn2-xAlxZn0.2Ni0.6Mg0.2O4 high entropy oxide films

被引：7
作者：
Ren, Wei [1 ,2 ]
Ding, Tian [1 ]
Wang, Wei-Li [2 ]
Zhang, Yu-Xin [1 ]
Li, Yi [1 ]
Lu, Yi-Tian [1 ]
Ma, Chao [3 ]
机构：
[1] Xian Univ Posts & Telecommun, Sch Sci, Xian 710121, Peoples R China
[2] Northwestern Polytech Univ, Xian 710072, Peoples R China
[3] Chengdu Technol Univ, Sch Elect Engn, Sch Microelect, Chengdu 611730, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2023年 / 34卷 / 07期
基金：
中国国家自然科学基金;
关键词：
ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; PREFERRED ORIENTATION; THIN-FILMS; MN1.2CO1.5NI0.3O4; TEMPERATURE; SPINELS;
D O I：
10.1007/s10854-023-10082-w
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mn2-xAlxZn0.2Ni0.6Mg0.2O4 (0 < x < 1) high entropy oxide films were prepared on Si substrates using two-step processing method. The effects of Al doping on the microstructure, cation distribution, optical and electrical properties of the films were investigated. It is revealed that rows of micro-holes form during the high-temperature oxidation reaction of metal multilayers in air. Al3+ mainly replaces Mn3+ in octahedron, while it does not affect the distribution of Mn4+ in octahedrons as well as that of other divalent cations in tetrahedrons. With the change of Al/Mn cation content, the thermal constant of the films increase from 3096.8 to 3615.8 K. When x = 0.4, the ion concentration of Mn3+/Mn4+ is closest to 1, and the electrical performance is optimal. The films with minor addition of Al exhibit high refractive index values in visible and infrared band (over 1150 nm wavelength), more Al and less Mn in the films degrade their optical properties.
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页数：14
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