First-principle study of Mg-based rare earth spinels MgSm2Y4 (Y--S, Se) for spintronic and thermoelectric devices

被引:5
作者
Alburaih, Huda A. [1 ]
Noor, N. A. [2 ]
Bououdina, M. [3 ]
Ullah, Hamid [2 ]
Laref, A. [4 ]
Sharma, Ramesh [5 ]
机构
[1] Princess Nourah Bint Abdulrahman Univ, Coll Sci, Dept Phys, POB 84428, Riyadh 11671, Saudi Arabia
[2] RIPHAH Int Univ, Dept Phys, Campus Lahore, Lahore, Pakistan
[3] Prince Sultan Univ, Fac Humanities & Sci, Dept Math & Sci, Riyadh, Saudi Arabia
[4] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
[5] Feroze Gandhi Inst Engn & Technol, Dept Appl Sci, Raebareli 229001, UP, India
关键词
First-principle study; Sm-based spinels; Ferromagnetism; Power factor; Seebeck coefficient; Energy device; AB-INITIO; PRESSURE; TRANSITION; PEROVSKITE; CO;
D O I
10.1016/j.matchemphys.2023.128756
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mechanical, spin-polarized electronic, and transport characteristics of rare-earth-based MgSm2Y4 (Y--S, Se) spinels are investigated using first-principle calculations. In contrast to the anti-ferromagnetic and nonmagnetic states of MgSm2Y4 (Y--S, Se), the optimization study reveals that ferromagnetic states release more energy, and optimized lattice constants in ferromagnetic states are comparable to existing values. Phonon dispersion and formation energy are also calculated to confirm the dynamical stability stability. The ductile character is confirmed by investigating the Poisson's and Pugh ratios, and the values of other elastic parameters show their importance for the manufacturing of devices. Heisenberg model and the density of electron states at the Fermi level report the Curie temperature and the spin polarization. Spin-polarized electronic properties indicate half -metallic ferromagnetic because the spin-down reflects a semiconductor nature, whereas the metallic nature manifests the spin-up. The total magnetic moments are generated through hybridization of chalcogenide 2p-states and the Sm f-states. We found that the studied spinels may be used in thermoelectric devices by exam-ining transport characteristics such as electronic and phononic thermal conductivity, Seebeck co-efficient, and figures of merit (ZT). Our results indicate that the ZT for MgSm2S4 is almost three times the ZT obtained for MgSm2Se4.
引用
收藏
页数:9
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