共 50 条
[43]
1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature
[J].
OPTICS EXPRESS,
2014, 22 (19)
:22608-22615
[44]
Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes
[J].
2019 24TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) AND 2019 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING AND COMPUTING (PSC),
2019,
[46]
Mesa-isolated InGaAs avalanche photodiode damage by ionizing radiation
[J].
NANOPHOTONICS AND MACROPHOTONICS FOR SPACE ENVIRONMENTS V,
2011, 8164
[47]
Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes
[J].
2021 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD),
2021,
:41-42
[48]
Dark current reduction of avalanche photodiode using optimized InGaAsP/InAlAs superlattice structure
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
2002, 41 (2B)
:1182-1185
[49]
Novel Field-Plate Integrated Mesa-Type InGaAs/InP Avalanche Photodiode
[J].
2022 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT),
2022,
:48-50