Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gainxbandwidth product

被引:2
作者
Wang, Shuai [1 ,2 ]
Ye, Han [1 ,2 ]
Geng, Li-Yan [1 ,2 ]
Xiao, Fan [1 ,2 ]
Chu, Yi-Miao [1 ,2 ]
Zheng, Yu [1 ,2 ]
Han, Qin [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
关键词
avalanche photodiode; planar; gainxbandwidth product; dark current; 85.60.Gz; 73.40.Kp; 81.15.Hi; LOW DARK CURRENT; BANDWIDTH PRODUCT; INP;
D O I
10.1088/1674-1056/ace61b
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode (APD) by computational simulations and experimental results. The APD adopts the structure of separate absorption, charge, and multiplication (SACM) with top-illuminated. Computational simulations demonstrate how edge breakdown effect is suppressed in the guardring-free structure. The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gainxbandwidth (GB) product. The dark current is 3 nA at 0.9Vbr, and the unit responsivity is 0.4 A/W. The maximum 3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55 mu m.
引用
收藏
页数:5
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