A Physics-Based Model and Its Solution Methodology for Hysteresis Mobile-Ionic Dielectrics

被引：1

作者：

Chen, Jiajia ^{[1
]}

Liu, Huan ^{[1
]}

Jin, Chengji ^{[1
]}

Gong, Zhi ^{[1
]}

Gu, Jiani ^{[1
]}

Yu, Xiao ^{[1
]}

Yang, Shiyou ^{[2
]}

Han, Genquan ^{[1
,3
]}

机构：

[1] Zhejiang Lab, Res Ctr Intelligent Chips & Devices, Hangzhou 311121, Peoples R China

[2] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China

[3] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2023年 / 59卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Mathematical models; Ions; Dielectrics; Semiconductor device modeling; Poisson equations; Behavioral sciences; Transistors; Hysteresis; mobile-ionic (MI) dielectrics; physics-based model;

D O I：

10.1109/TMAG.2022.3233640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based model and its corresponding solution methodology for the mobile-ionic (MI) dielectrics exhibiting charge-voltage (Q-V) hysteresis behaviors are proposed based on ion drift-diffusion (IDD) equations coupling with Poisson's equation. The proposed model captures the dynamic distribution of mobile ions' concentrations within dielectric along the external electric field. The accuracy of the proposed model is validated by comparing the computed results with the experimental ones. Moreover, to investigate the synaptic characters of MI field-effect transistors (MIFETs), numerical model based on coupled non-equilibrium Green's function (NEGF), IDD, and Poisson's equations is also established. Potentiation and depression properties of MIFET are decently reproduced with the proposed model, which are consistent with the experiment results.

引用

页数：5

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