Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

被引：1
作者：
Khan, Kamruzzaman [1 ,2 ]
Wurm, Christian [2 ]
Collins, Henry [2 ]
Muthuraj, Vineeta R. [7 ]
Khan, Md Irfan [3 ]
Lee, Cindy [4 ]
Keller, Stacia [2 ]
Ahmadi, Elaheh [3 ,5 ,6 ]
机构：
[1] Univ Michigan, Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Univ Calif Santa Barbara, Elect & Comp Engn, Santa Barbara, CA USA
[3] Univ Michigan, Elect Engn & Comp Sci, Ann Arbor, MI USA
[4] Univ Michigan, Mech Engn, Ann Arbor, MI USA
[5] Univ Michigan, Appl Phys Program, Ann Arbor, MI USA
[6] Univ Calif Los Angeles, Elect & Comp Engn, Los Angeles, CA USA
[7] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA USA
来源：
PHYSICA SCRIPTA | 2024年 / 99卷 / 01期
关键词：
porous GaN; InGaN; nitride growth; epitaxy; pseudo-substrate; LIGHT-EMITTING-DIODES; INGAN LAYERS; GROWTH;
D O I：
10.1088/1402-4896/ad156d
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this study, the impact of InGaN film thickness and different compositionally graded structures on InGaN relaxation grown on tiled GaN-on-porous-GaN pseudo substrates (PSs) were studied. In addition, the impact of the degree of porosification on the In incorporation and relaxation of InGaN were examined. 82% relaxed 1 mu m thick In0.18Ga0.82N, which is equivalent to a fully relaxed In-composition of 15%, on porous GaN PS was obtained. Additionally, multi-quantum wells (MQWs) grown on the MBE InGaN-on-porous GaN base layers by MOCVD showed similar to 85 nm redshift in comparison with MQWs grown on planar GaN. The developed InGaN-on-porous-GaN PSs can provide an alternative route to grow MQW with a high In content which is essential for high-efficiency nitride-based red LEDs.
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页数：10
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