Investigation of gallium oxide thin film hetero-integrated with bulk diamond via atomic layer deposition

被引:18
作者
Gu, Lin [1 ,2 ]
Ma, Hong-Ping [1 ,2 ,3 ]
Li, Yuan [4 ]
Wang, An-Feng [1 ,2 ]
Chen, Wen-Jie [1 ,2 ]
Tang, Zhuo-Rui [1 ,2 ]
Shen, Yi [1 ,2 ]
Sun, Fang yuan [4 ]
Zhu, Jing-Tao [5 ]
Zhang, Qing-Chun [1 ,2 ,3 ]
机构
[1] Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
[2] Fudan Univ, Shanghai Res Ctr Silicon Carbide Power Devices Eng, Silicon Carbide Power Devices Engn & Technol, Shanghai 200433, Peoples R China
[3] Fudan Univ Ningbo, Inst Wide Bandgap Semicond Mat & Devices, Res Inst, Ningbo 315327, Zhejiang, Peoples R China
[4] Univ Sci & Technol Beijing, Sch Energy & Environm Engn, Beijing 100083, Peoples R China
[5] Tongji Univ, Inst Precis Opt Engn, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
关键词
Gallium oxide; Diamond; ALD; Band alignment; TDTR; THERMAL-CONDUCTIVITY; OPTICAL-PROPERTIES; SPECTROSCOPY; BETA-GA2O3; SURFACE; SINGLE; GROWTH;
D O I
10.1016/j.apsusc.2023.158502
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, the characteristics of the gallium oxide (Ga2O3)/diamond heterostructure were thoroughly examined after the preparation of Ga2O3 thin film on bulk diamond via atomic layer deposition. The X-ray diffraction (XRD) analysis revealed the Ga2O3 film amorphous and diamond polycrystalline. The atomic force microscopy (AFM) mapping displayed remarkably smooth surfaces of the Ga2O3 film and diamond substrate (RMS of 0.184 and 0.508 nm, respectively). The scanning electron microscopy (SEM) images showed conspicuous grains formed on the diamond, and small crystallites on the surface of the film. The optical characteristics were investigated via spectroscopic ellipsometry (SE) and UV/Vis/NIR spectrophotometer. Raman spectroscopy suggested a sharp diamond-related (sp3) peak and an extremely weak bulge band around 1350-1620 cm- 1. X-ray photoelectron spectroscopy (XPS) analysis indicated Ga2O3/diamond heterojunction to be staggered (type II) band alignment with valence band and conduction band offsets of around 1.18 eV and 2.09 eV, respectively. Moreover, according to time-domain thermoreflectance (TDTR) measurements, the thermal conductivity of Ga2O3 and the thermal boundary conductivity of the heterointerface were 5.13 W/(m center dot K) and 19.22 MW/(m2 center dot K), respectively. These findings not only demonstrate the feasibility of Ga2O3-on-diamond hetero-integration but open up new prospects for the design and physical analysis of Ga2O3/diamond-based devices in the future.
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页数:12
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