The BiDFET Device and Its Impact on Converters

被引:12
作者
Baliga, B. Jayant [1 ]
Hopkins, Douglas [2 ]
Bhattacharya, Subhashish [2 ]
Agarwal, Aditi [3 ]
Cheng, Tzu-Hsuan [4 ]
Narwal, Ramandeep [4 ]
Kanale, Ajit [4 ]
Shah, Suyash Sushilkumar [5 ]
Han, Kijeong [6 ]
机构
[1] North Carolina State Univ NCSU, Elect & Comp Engn, Raleigh, NC USA
[2] North Carolina State Univ NCSU, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[3] Navitas Semicond, El Segundo, CA USA
[4] North Carolina State Univ NCSU, Raleigh, NC USA
[5] NCSU, NSF FREEDM Syst Ctr, Raleigh, NC USA
[6] Cree Wolfspeed, Raleigh, NC USA
来源
IEEE POWER ELECTRONICS MAGAZINE | 2023年 / 10卷 / 01期
关键词
Photovoltaic systems; Motor drives; Capacitors; Rectifiers; Inverters; Topology; Matrix converters;
D O I
10.1109/MPEL.2023.3237059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The matrix converter topology for direct ac-to-ac conversion offers elimination of the bulky and unreliable d.c. link capacitors used in the popular voltage-source inverter (VSI) with a front-end rectifier. The resulting more compact and higher efficiency implementation is a desirable solution for a wide variety of applications, such as photovoltaic energy generation, motor drives, and energy storage systems.
引用
收藏
页码:20 / 27
页数:8
相关论文
共 9 条
  • [1] Agarwal A., 2022, POWER ELECT DEVICES, V2, DOI [10.1016/j.pedc.2022.100008, DOI 10.1016/J.PEDC.2022.100008]
  • [2] Baliga B. J., 2020, U.S. Patent, Patent No. [10,804,393, 10804393]
  • [3] Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry
    Baliga, B. Jayant
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 : 1111 - 1117
  • [4] Cheng T.-H., 2021, JournalofMicroelectronics andElectronic Packaging, V18, P123, DOI 10.4071/imaps.1427774
  • [5] Han K, 2020, PROC INT SYMP POWER, P242, DOI [10.1109/ISPSD46842.2020.9170064, 10.1109/ispsd46842.2020.9170064]
  • [6] Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
    Kanale, Ajit
    Cheng, Tzu-Hsuan
    Shah, Suyash Sushilkumar
    Han, Kijeong
    Agarwal, Aditi
    Baliga, B. Jayant
    Hopkins, Douglas
    Bhattacharya, Subhashish
    [J]. 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), 2021, : 1267 - 1274
  • [7] Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications
    Shah, Suyash Sushilkumar
    Narwal, Ramandeep
    Bhattacharya, Subhashish
    Kanale, Ajit
    Cheng, Tzu-Hsuan
    Mehrotra, Utkarsh
    Agarwal, Aditi
    Baliga, B. Jayant
    Hopkins, Douglas C.
    [J]. 2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2021, : 568 - 575
  • [8] Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme
    Sung, Woongje
    Baliga, B. J.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) : 1605 - 1608
  • [9] A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension
    Sung, Woongje
    Baliga, B. J.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) : 1609 - 1612