The effect of structure parameters and static electric field on the nonlinear optical properties of triple InGaAs/GaAs quantum well

被引：10

作者：

Sayrac, M. ^{[1
,2
]}

Kaynar, E. ^{[1
,2
]}

Ungan, F. ^{[3
]}

机构：

[1] Sivas Cumhuriyet Univ, Dept Nanotechnol Engn, Sivas, Turkiye

[2] Sivas Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Sivas, Turkiye

[3] Sivas Cumhuriyet Univ, Dept Phys, Sivas, Turkiye

来源：

JOURNAL OF MOLECULAR STRUCTURE | 2023年 / 1273卷

关键词：

Low dimensional structures; Quantum wells; Semiconducting InxGa1-xAs/GaAs; Numerical Simulations; REFRACTIVE-INDEX CHANGES; 3RD HARMONIC-GENERATION; INTENSE LASER FIELD; HYDROSTATIC-PRESSURE; INTERSUBBAND TRANSITIONS; 2ND-HARMONIC GENERATION; ABSORPTION-COEFFICIENTS; BINDING-ENERGY; RECTIFICATION; TEMPERATURE;

D O I：

10.1016/j.molstruc.2022.134252

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Optical properties of InxGa1-xAs/GaAs triple QW are studied for different quantum well thicknesses and external electric fields. The effective mass approximation is used to calculate the band alignment of the structure. The finite difference method (FDM) is applied to solve the 1D- Schrodinger equation. Inter-subband energies and the total optical absorption coefficients (TOACs) and total relative refractive index changes (RRICs) are numerically calculated under the applied external electric field. The structure parameters and applied electric field cause the separation of the energy levels and variation of the dipole moment matrix elements. These separations are responsible for the resonant peak shifts. It is shown that the varied structure parameters and external electric field cause red or blue shifts in the resonant peak position of TOAC and RRIC coefficients. (c) 2022 Elsevier B.V. All rights reserved.

引用

页数：8

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