One-Step Synthesis of Two-Dimensional Metal-Semiconductor Circuitry Based on W-Triggered Spatial Phase Engineering

Molybdenum ditelluride (MoTe2) exhibits avariety ofcrystal phases, which can be phase-controlled by various externalmeans, showing broad prospects in modern integrated circuits. Thestructure in which the semimetal 1T & PRIME; (or T-d) phaseelectrode contacts the semiconductor 2H phase channel is consideredan elegant solution for high-performance two-dimensional (2D) circuitsbecause it achieves low contact resistance. However, most of the 2Dmetal-semiconductor structures for large-area integration usea two-step growth process, which puts forward high requirements forthe secondary growth compatibility of the material. Here, we developa method for the stable synthesis of the metallic Mo x W1-x Te2 (0 < x < 1) by W-triggered spatial phase engineering, andwe further obtain a large-area Mo x W1-x Te2/2H-MoTe2 in-plane metal-semiconductor structure by one-step tellurizationof a MoW/Mo periodic structure. Due to the unique 2D in-plane epitaxialmechanism of the phase transition from 1T & PRIME; to 2H, the highlycrystalline semiconductor 2H-MoTe2 squeezes between twometallic Mo x W1-x Te2 electrodes and forms a seamless coplanar contactedchannel; thus, the fabricated field-effect transistors exhibit goodelectrical characteristics. In addition, large-area 2D metal-semiconductorheterostructure arrays can be transferred onto flexible substrates,showing promising applications in flexible electronics. Herein, one-stepsynthesis of large-area 2D in-plane metal-semiconductor arraysopens up new possibilities for future integrated high-performancelogic circuits.