Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures

被引:2
|
作者
Jin, Eric N. [1 ]
Lang, Andrew C. [1 ]
Downey, Brian P. [1 ]
Gokhale, Vikrant J. [1 ]
Hardy, Matthew T. [1 ]
Nepal, Neeraj [1 ]
Katzer, D. Scott [1 ]
Wheeler, Virginia D. [1 ]
机构
[1] US Naval Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA
关键词
MOLECULAR-BEAM EPITAXY; PEROVSKITE; 111; SRTIO3; WURTZITE; 0002; GAN; PIEZOELECTRIC RESPONSE; POLARIZATION; ALLOY; ALN;
D O I
10.1063/5.0152694
中图分类号
O59 [应用物理学];
学科分类号
摘要
Heterogeneous integration of functional oxides with ultra-wide bandgap (UWBG) semiconductors is desired for the realization of novel hybrid systems applicable to a wide array of commercial electronics and defense applications. In this work, we demonstrate the growth of crystalline SrTiO3 (STO) thin films on high-electron-mobility transistor (HEMT) heterostructures based on an emergent UWBG semiconductor ScAlN, used as the barrier layer on a GaN channel, and determine the effects of the pre-growth chemical treatments of the ScAlN surface on resultant heterostructure properties. We investigate wet chemical cleans of ScAlN with solvents, piranha solution, UV ozone and hydrofluoric acid, and a sulfuric-phosphoric acid mix prior to STO growth, and show that the commonly used piranha solution degrades the ScAlN surface, thereby reducing the crystal quality of the deposited STO layers and lowering the channel mobility. We determine that among the treatments studied, the solvent and sulfuric-phosphoric acid cleans were the least disruptive to the electrical properties of the GaN channel as evidenced from Hall effect measurements, but the sulfuric-phosphoric acid clean results in best oxide crystallinity, as determined from structural characterizations. We perform transmission electron microscopy imaging on the piranha-treated and sulfuric-phosphoric-treated samples to compare the microstructure and find that while intermixing occurs at the oxide-nitride interfaces for both samples, the interface roughness is lower and the STO grain size is larger in the sample with sulfuric-phosphoric acid treatment. This work demonstrates the first epitaxial growth of STO on an UWBG semiconductor and motivates STO/ScAlN/GaN as material platforms for high-frequency, high-power-density HEMTs.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures
    Jin, Eric N.
    Lang, Andrew C.
    Downey, Brian P.
    Gokhale, Vikrant J.
    Hardy, Matthew T.
    Nepal, Neeraj
    Katzer, D. Scott
    Wheeler, Virginia D.
    Journal of Applied Physics, 2023, 134 (02):
  • [2] Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures
    Groenendijk, D. J.
    Manca, N.
    Mattoni, G.
    Kootstra, L.
    Gariglio, S.
    Huang, Y.
    van Heumen, E.
    Caviglia, A. D.
    APPLIED PHYSICS LETTERS, 2016, 109 (04)
  • [3] Surface acoustic wave propagation in PZT/YBCO/SrTiO3 and PbTiO3/YBCO/SrTiO3, epitaxial heterostructures
    Mansingh, A
    Nayak, R
    Gupta, V
    Sreenivas, K
    FERROELECTRICS, 1999, 224 (1-4) : 703 - 710
  • [4] Microstructure of epitaxial SrTiO3/Pt/Ti/sapphire heterostructures
    Schmidt, S
    Ok, YW
    Klenov, DO
    Lu, JW
    Keane, SP
    Stemmer, S
    JOURNAL OF MATERIALS RESEARCH, 2005, 20 (09) : 2261 - 2265
  • [5] Microstructure of Epitaxial SrTiO3/Pt/Ti/ Sapphire Heterostructures
    Steffen Schmidt
    Young-Woo Ok
    Dmitri O. Klenov
    Jiwei Lu
    Sean P. Keane
    Susanne Stemmer
    Journal of Materials Research, 2005, 20 (9) : 2261 - 2265
  • [6] Epitaxial growth and transport properties of BaTiO3/LaAlO3/SrTiO3 heterostructures
    Gao, Haobin
    Peng, Wei
    Zhu, Xiaohong
    Hu, Tao
    Xie, Xiaoming
    Zhu, Jiliang
    CERAMICS INTERNATIONAL, 2014, 40 (08) : 13763 - 13769
  • [7] Epitaxial growth of semiconductors on SrTiO3 substrates
    Fujioka, H
    Ohta, J
    Katada, H
    Ikeda, T
    Noguchi, Y
    Oshima, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) : 137 - 141
  • [8] Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(001) crystalline templates
    Saint-Girons, G.
    Cheng, J.
    Chettaoui, A.
    Penuelas, J.
    Gobaut, B.
    Regreny, P.
    Largeau, L.
    Patriarche, G.
    Botella, Claude
    Hollinger, G.
    MICROELECTRONIC ENGINEERING, 2011, 88 (04) : 469 - 471
  • [9] Epitaxial growth of Fe/MgO/Fe heterostructures on SrTiO3(001) substrates by magnetron sputtering
    Marukame, T
    Matsuda, K
    Uemura, T
    Yamamoto, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08): : 6012 - 6015
  • [10] Surface engineering of SrTiO3 (111) substrates for the epitaxial growth of BLT films
    Suh, JH
    Lee, YS
    Park, CG
    ELECTRON MICROSCOPY OF MOLECULAR AND ATOM-SCALE MECHANICAL BEHAVIOR, CHEMISTRY AND STRUCTURE, 2005, 839 : 85 - 90