In Situ Sputtering From the Micromanipulator to Enable Cryogenic Preparation of Specimens for Atom Probe Tomography by Focused-Ion Beam

被引:9
作者
Douglas, James O. [1 ]
Conroy, Michele [1 ]
Giuliani, Finn [1 ]
Gault, Baptiste [1 ,2 ]
机构
[1] Imperial Coll London, Royal Sch Mines, Dept Mat, Prince Consort Rd, London SW7 2BP, England
[2] Max Planck Inst Eisenforschung GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany
关键词
atom probe tomography; cryogenic preparation; focused-ion beam; in situ sputtering; ELECTRON-MICROSCOPY; REDEPOSITION; FROZEN; TEM; DIFFRACTION; INTERFACES; DEPOSITION; FUTURE; WATER;
D O I
10.1093/micmic/ozad020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Workflows have been developed in the past decade to enable atom probe tomography analysis at cryogenic temperatures. The inability to control the local deposition of the metallic precursor from the gas-injection system (GIS) at cryogenic temperatures makes the preparation of site-specific specimens by using lift-out extremely challenging in the focused-ion beam. Schreiber et al. exploited redeposition to weld the lifted-out sample to a support. Here, we build on their approach to attach the region-of-interest and additionally strengthen the interface with locally sputtered metal from the micromanipulator. Following standard focused-ion beam annular milling, we demonstrate atom probe analysis of Si in both laser pulsing and voltage mode, with comparable analytical performance as a presharpened microtip coupon. Our welding approach is versatile, as various metals could be used for sputtering, and allows similar flexibility as the GIS in principle.
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页码:1009 / 1017
页数:9
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