Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

We present an analytical model for Ferro PZT Al2O3/AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrodinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n(s)), threshold voltage (V-th), drain current (I-ds), gate capacitance (C-gs and C-gd), and unit gain cutoff frequency(f(T)) model equations are presented and simulated with MATLAB tool. It is observed that the insertion of the Ferro Pb(Zr, Ti)O-3 PZT (lead zirconium titanate) material can improve the device's performance. The proposed Ferro PZT MOSHEMT model accurately predicts a higher drain current of 1.14 A/mm, a high transconductance of 362 S/mm, a gate-to-source capacitance of 50.99 pF, a gate-to-drain capacitance of 38.25 pF, and high cutoff frequency of 0.033 THz for 20 nm AlGaN barrier layer. The results show good agreement with the TCAD-Atlas simulation and are satisfactory for the different AlGaN barrier layer thicknesses. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.