Enhanced light output power from AlGaN-based deep ultraviolet LEDs achieved by a four-in-one mesa structure

被引：7

作者：

Zheng, Xi ^{[1
]}

Wu, Xiyang ^{[1
]}

Yang, Renlong ^{[1
]}

Tong, Changdong ^{[1
]}

Zhong, Chenming ^{[1
]}

Gao, Fengyun ^{[1
]}

Lin, Yue ^{[1
]}

Chen, Guolong ^{[1
]}

Lu, Yijun ^{[1
]}

Chen, Zhong ^{[1
]}

Guo, Weijie ^{[1
]}

机构：

[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 05期

基金：

中国国家自然科学基金;

关键词：

EXTRACTION EFFICIENCY; EMITTING-DIODES; PERFORMANCE; DESIGN;

D O I：

10.1063/5.0157081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study aimed to investigate the impact of mesa geometry on the light output characteristics of AlGaN-based 275 nm deep ultraviolet light-emitting diodes (DUV-LEDs). By dividing the original single-junction mesa into four parts and connecting them serially (four-in-one), high-voltage (HV) DUV-LEDs with rectangular, hexagonal, circular, triangular, and square submesas were realized, achieving significant enhancement of the light output power (LOP) and wall-plug efficiency (WPE). The LOP of HV DUV-LEDs with hexagonal submesas has been promoted substantially compared to that of the original DUV-LEDs. Among the investigated five different types of submesas, hexagonal-type HV DUV-LEDs can achieve the highest LOP and WPE due to the higher sidewall light extraction. Furthermore, it is also demonstrated that pulse current driving can reduce the self-heating effect of HV DUV-LEDs.

引用

页数：7

共 43 条

[41] Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers
Zhang, Aoxiang
Ren, Bingyang
Wang, Fang
Liou, Juin J.
Liu, Yuhuai
OPTICAL ENGINEERING, 2022, 61 (10)
[42] Circular p-GaN/p-AlGaN Rods With Metal/Thin Dielectric-Type p-Contact to Increase the Wall-Plug Efficiency for 258-nm AlGaN-Based Deep Ultraviolet Light Emitting Diodes
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Huang, Fuping
Zhang, Yonghui
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025,
[43] Effects of Chip Size and Thermally Oxidized Al x Ga2-x O3 Sidewall on the Optoelectrical Characteristics of AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes
Wang, Tien-Yu
Lai, Wei-Chih
Xie, Qiao-Ju
Chang, Sheng-Po
Kuo, Cheng-Huang
Sheu, Jinn-Kong
ACS APPLIED ELECTRONIC MATERIALS, 2024, : 8757 - 8765

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