Enhanced light output power from AlGaN-based deep ultraviolet LEDs achieved by a four-in-one mesa structure

被引：7
作者：
Zheng, Xi [1 ]
Wu, Xiyang [1 ]
Yang, Renlong [1 ]
Tong, Changdong [1 ]
Zhong, Chenming [1 ]
Gao, Fengyun [1 ]
Lin, Yue [1 ]
Chen, Guolong [1 ]
Lu, Yijun [1 ]
Chen, Zhong [1 ]
Guo, Weijie [1 ]
机构：
[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 05期
基金：
中国国家自然科学基金;
关键词：
EXTRACTION EFFICIENCY; EMITTING-DIODES; PERFORMANCE; DESIGN;
D O I：
10.1063/5.0157081
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This study aimed to investigate the impact of mesa geometry on the light output characteristics of AlGaN-based 275 nm deep ultraviolet light-emitting diodes (DUV-LEDs). By dividing the original single-junction mesa into four parts and connecting them serially (four-in-one), high-voltage (HV) DUV-LEDs with rectangular, hexagonal, circular, triangular, and square submesas were realized, achieving significant enhancement of the light output power (LOP) and wall-plug efficiency (WPE). The LOP of HV DUV-LEDs with hexagonal submesas has been promoted substantially compared to that of the original DUV-LEDs. Among the investigated five different types of submesas, hexagonal-type HV DUV-LEDs can achieve the highest LOP and WPE due to the higher sidewall light extraction. Furthermore, it is also demonstrated that pulse current driving can reduce the self-heating effect of HV DUV-LEDs.
引用
收藏
页数：7
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