Sol-gel synthesized rare earth La3+ions doped Zn2SiO4 phosphors for lighting applications

被引:8
作者
Diana, P. [1 ]
Sebastian, S. [2 ]
Saravanakumar, S. [1 ]
Robert, M. Charles [3 ]
Shkir, Mohd [4 ]
机构
[1] Kalasalingam Acad Res & Educ, Dept Phys, Krishnan Koil 626126, Tamil Nadu, India
[2] Arul Anandar Coll, PG & Res Dept Phys, Madurai 625514, India
[3] HKRH Coll, Dept Phys, Uthamapalayam 625533, India
[4] King Khalid Univ, Fac Sci, Dept Phys, Abha 61413, Saudi Arabia
关键词
Zinc silicate; Rare earth element(RE3+); La-dopedZn2SiO4; Structure; PLQY; CIE; TRPL; TL; DIELECTRIC-PROPERTIES; PHOTOLUMINESCENCE PROPERTIES; LUMINESCENCE PROPERTIES; ZINC SILICATE; TIO2; NANOPARTICLES; GREEN PHOSPHORS; CERAMIC POWDERS; LA; COMPOSITE; EMISSION;
D O I
10.1016/j.ceramint.2023.05.182
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, Zn2-xLaxSiO4 (x = 0.00, 0.02, 0.04, and 0.06) materials with varying weight percentages of lanthanum (La) in zinc silicate (Zn2SiO4) were synthesized using the sol-gel process. The effect of La dopant on the structure, morphology, and optical characteristics of Zn2SiO4 was investigated through various analytical and spectroscopical techniques. According to PXRD measurements, La3+ ions were incorporated into the host ma-terials of Zn2SiO4, considerably affecting their crystallinity. Irregular granular and pebble stone-like morphology was observed in the FESEM analysis. The optical energy bandgap of La-doped Zn2SiO4 materials decreased from 5.09 eV to 3.80 eV while increasing the La dopant into Zn2SiO4 host systems. The photoluminescence (PL) spectra and photoluminescence quantum yield (PLQY) confirmed the increase of luminescent peak intensity at 730 nm. A tri-exponential fitting technique was used to determine the luminescence decay lifetime of the sig-nificant emissions of La-doped Zn2SiO4, and the average lifetime was found to be 30.4 ns. Dosimetry could benefit significantly from the thermoluminescence investigation conducted for the La-doped Zn2SiO4 phosphor at a linear heating rate of 8 degrees C/s.
引用
收藏
页码:26469 / 26478
页数:10
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