Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy

被引:3
|
作者
Fang, Hong-Wei [1 ,2 ]
Liang, Ai-Ji [1 ,3 ]
Schroeter, Niels B. M. [4 ]
Cui, Sheng-Tao [5 ]
Liu, Zhong-Kai [1 ,3 ]
Chen, Yu-Lin [1 ,3 ,6 ]
机构
[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
[4] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[5] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
[6] Univ Oxford, Dept Phys, Oxford OX1 3PU, England
基金
中国国家自然科学基金; 国家重点研发计划; 美国能源部;
关键词
Dirac semimetal; Electronic structure; Angle-resolved photoelectron spectroscopy; K evaporation; FERMI ARCS; DISCOVERY; INSULATOR;
D O I
10.1007/s42864-022-00141-w
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Type-II topological Dirac semimetals are topological quantum materials hosting Lorentz-symmetry breaking type-II Dirac fermions, which are tilted Dirac cones with various exotic physical properties, such as anisotropic chiral anomalies and novel quantum oscillations. Until now, only limited material systems have been confirmed by theory and experiments with the type-II Dirac fermions. Here, we investigated the electronic structure of a new type-II Dirac semimetal VAl3 with angle-resolved photoelectron spectroscopy. The measured band dispersions are consistent with the theoretical prediction, which suggests the Dirac points are located close to (at about 100 meV above) the Fermi level. Our work demonstrates a new type-II Dirac semimetal candidate system with different Dirac node configurations and application potentials.
引用
收藏
页码:332 / 338
页数:7
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