Patterned Ga2O3 nanowires synthesized by CVD method for High-performance self-powered ultraviolet photodetector

High-performance and energy-efficient ultraviolet photodetectors play a critical role in civilian and military fields. Here, patterned growth of highly crystalline straight Ga2O3 nanowires on p-type GaN epitaxial film wafer substrate is achieved by bottom-up technology using an economical chemical vapor deposition method. A self-powered ultraviolet photodetector based on GaN/Ga2O3 nanowires p-n junction for broadband UV detection is constructed by combining spin coating Poly(methyl methacrylate) as an insulating layer and magnetic sputtering an Au thin film as top transparent conductive electrode. This nanowiresfilm structure device exhibits excellent performance under zero bias voltage, including considerable responsivity of 960 mA W-1, high detectability of 3.82 x 10(13) Jones, ultrahigh ultraviolet/visible inhibition ratio (R-254 nm/R-400 nm) of 7.92 x 10(3), fast rise/decay time of 4/12 ms and a high photo-to-dark current ratio greater than 10(4). The self-powered property under zero bias is attributed to the built-in electric field formed between the p-GaN film and the n-Ga2O3 nanowires, which creates a driving force for the rapid separation of photo-generated carriers. The high-performance mainly credits to the device's excellent UV light utilization efficiency and unique interfacial engineering of the p-n junction. This work provides a new avenue for the application of Ga2O3 nanowires in high-performance p-n junction self-powered photodetectors that can operate in harsh environments where it is inconvenient to transmit electric power. (c) 2022 Elsevier B.V. All rights reserved.