Emerging Atomic Layer Deposition Technology toward High-k Gate Dielectrics, Energy, and Photocatalysis Applications

被引：1
作者：
Liu, Yanfei [1 ]
Zhang, Huang [2 ]
Kang, Shifei [1 ,2 ]
机构：
[1] Univ Shanghai Sci & Technol, Inst Photochem & Photofunct Mat IPPM, Shanghai 200093, Peoples R China
[2] Univ Shanghai Sci & Technol, Dept Environm Sci & Engn, Shanghai 200093, Peoples R China
来源：
ENERGY TECHNOLOGY | 2023年 / 11卷 / 10期
关键词：
atomic layer deposition (ALD); cell devices; photocatalysis; scale-up preparation; THIN-FILMS; TIO2; WATER; ALD; CATALYSTS; MEMBRANE; ZNO; GROWTH; CO2; ADSORPTION;
D O I：
10.1002/ente.202300289
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The precise design and efficient development of nanoscale materials at the atomic level has enabled high-end renewable energy storage, conversion devices, and large-scale environmental governance equipment. Atomic layer deposition (ALD) is a new vapor-phase technology for precise surface thin-film preparation, and is outstanding with self-limiting reactions, large deposition area, adjustable film composition, film uniformity, angstrom thickness control, and low temperature. With these characteristics, ALD plays an important role in many industry and research fields. This review briefly introduces the principle, main technical advantages, and applications of ALD, including high-k gate dielectrics, solar cells, fuel cells, and photocatalysis. The progress of the ALD technology in preparation and application of photocatalyst is emphatically reviewed, and the large-scale application of ALD in photocatalytic thin-film materials is prospected.
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页数：16
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