Study on the influence of variable temperature growth on the properties of highly strained InGaAs/GaAs MQWs grown by MOCVD

被引:2
作者
Wang, Quhui [1 ,2 ]
Ma, Xiaohui [1 ,2 ]
Wang, Haizhu [1 ,2 ]
Wang, Jiao [1 ,2 ]
Wang, Dengkui [1 ,2 ]
机构
[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
[2] Changchun Univ Sci & Technol, Res Inst Chongqing, Chongqing, Peoples R China
关键词
Multiple quantum wells; High strain; MOCVD; Localized states; CARRIER LOCALIZATION; QUANTUM-WELLS; PHOTOLUMINESCENCE; DEPENDENCE;
D O I
10.1016/j.jallcom.2022.168075
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The InGaAs/GaAs multiple quantum wells (MQWs) have played an important role in the epitaxial structure of semiconductor laser, solar cell, detector and so on. However, the preparation of high-quality InGaAs/GaAs MQWs with high indium content has always been a research problem. In this paper, five periods InGaAs/ GaAs MQWs were obtained with two methods by metal-organic chemical vapor deposition (MOCVD): constant and variable temperature growth methods, respectively. Our systematic theoretical and experi-mental studies indicated that there were wedding cake-like stacked steps on the surface of constant temperature sample, revealing an inhomogeneous distribution of layer thickness and indium content. Such interface fluctuations were manifested as two peaks in the photoluminescence (PL) spectra at low tem-perature, which were confirmed by theoretical fitting as the localized states emission (LE) peak and the free-carrier emission (FE) peak, respectively. For variable temperature sample, the change in the growth temperature of the barrier and well layers in each period could transform the morphology to a step-flow -mode surface, thus eliminating the localized states in MQWs. It could be seen that the variable temperature growth method was superior to the constant temperature method, the surface morphology, optical char-acteristics and crystal quality were all improved. This study will provide technical support for optimizing the device performance of InGaAs/GaAs MQWs with high indium content.(c) 2022 Elsevier B.V. All rights reserved.
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页数:7
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共 32 条
[1]   Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders [J].
Bergman, L ;
Chen, XB ;
Morrison, JL ;
Huso, J ;
Purdy, AP .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :675-682
[2]   MOVPE growth of highly strained InGaAs/GaAs quantum wells [J].
Bugge, F ;
Zeimer, U ;
Sato, M ;
Weyers, M ;
Trankle, G .
JOURNAL OF CRYSTAL GROWTH, 1998, 183 (04) :511-518
[3]   PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS FOR EVALUATION OF HIGH-QUALITY CDTE CRYSTALS [J].
COOPER, DE ;
BAJAJ, J ;
NEWMAN, PR .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :544-551
[4]   Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property [J].
Dong, Hailiang ;
Sun, Jing ;
Ma, Shufang ;
Liang, Jian ;
Jia, Zhigang ;
Liu, Xuguang ;
Xu, Bingshe .
SUPERLATTICES AND MICROSTRUCTURES, 2018, 114 :331-339
[5]   ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].
EHRLICH, G ;
HUDDA, FG .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&
[6]   Piezoelectric field effect on the optical properties of In0.21Ga0.79As/GaAs (113) MQW [J].
Fraj, Ibtissem ;
Saidi, Faouzi ;
Bouzaiene, Lotfi ;
Sfaxi, Larbi ;
Maaref, Hassen .
OPTICAL MATERIALS, 2016, 58 :121-127
[7]   The strain, energy band and photoluminescence of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate [J].
Gao, Xian ;
Fang, Xuan ;
Tang, Jilong ;
Fang, Dan ;
Wang, Dengkui ;
Wang, Xiaohua ;
Chen, Rui ;
Xu, Shijie ;
Wei, Zhipeng .
SOLID STATE COMMUNICATIONS, 2020, 309
[8]   Exciton localization in solution-processed organolead trihalide perovskites [J].
He, Haiping ;
Yu, Qianqian ;
Li, Hui ;
Li, Jing ;
Si, Junjie ;
Jin, Yizheng ;
Wang, Nana ;
Wang, Jianpu ;
He, Jingwen ;
Wang, Xinke ;
Zhang, Yan ;
Ye, Zhizhen .
NATURE COMMUNICATIONS, 2016, 7
[9]   Photon recycling characteristics of InGaAs/GaAsP multiple quantum well solar cells incorporating a spectrally selective filter and distributed Bragg reflector [J].
Hong, Chung-Yu ;
Wang, Yi-Chin ;
Su, Yu-Chih ;
Tsai, Jia-Ling ;
Tung, Chao-Ming ;
Tsai, Min-An ;
Ghi, Guo-Chung ;
Yu, Peichen .
OPTICS EXPRESS, 2019, 27 (25) :36046-36058
[10]   Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering [J].
Hou, Chunge ;
Zou, Yonggang ;
Wang, Haizhu ;
Wang, Xinying ;
Xu, Ying ;
Wang, Quhui ;
He, Zhifang ;
Fan, Jie ;
Shi, Linlin ;
Xu, Li ;
Lin, Fengyuan ;
Fang, Dan ;
Ma, Xiaohui .
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 770 :517-522