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Study on the influence of variable temperature growth on the properties of highly strained InGaAs/GaAs MQWs grown by MOCVD
被引:2
作者:

Wang, Quhui
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
Changchun Univ Sci & Technol, Res Inst Chongqing, Chongqing, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China

Ma, Xiaohui
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
Changchun Univ Sci & Technol, Res Inst Chongqing, Chongqing, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China

Wang, Haizhu
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
Changchun Univ Sci & Technol, Res Inst Chongqing, Chongqing, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China

Wang, Jiao
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
Changchun Univ Sci & Technol, Res Inst Chongqing, Chongqing, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China

Wang, Dengkui
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h-index: 0
机构:
Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
Changchun Univ Sci & Technol, Res Inst Chongqing, Chongqing, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
机构:
[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun, Jilin, Peoples R China
[2] Changchun Univ Sci & Technol, Res Inst Chongqing, Chongqing, Peoples R China
关键词:
Multiple quantum wells;
High strain;
MOCVD;
Localized states;
CARRIER LOCALIZATION;
QUANTUM-WELLS;
PHOTOLUMINESCENCE;
DEPENDENCE;
D O I:
10.1016/j.jallcom.2022.168075
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The InGaAs/GaAs multiple quantum wells (MQWs) have played an important role in the epitaxial structure of semiconductor laser, solar cell, detector and so on. However, the preparation of high-quality InGaAs/GaAs MQWs with high indium content has always been a research problem. In this paper, five periods InGaAs/ GaAs MQWs were obtained with two methods by metal-organic chemical vapor deposition (MOCVD): constant and variable temperature growth methods, respectively. Our systematic theoretical and experi-mental studies indicated that there were wedding cake-like stacked steps on the surface of constant temperature sample, revealing an inhomogeneous distribution of layer thickness and indium content. Such interface fluctuations were manifested as two peaks in the photoluminescence (PL) spectra at low tem-perature, which were confirmed by theoretical fitting as the localized states emission (LE) peak and the free-carrier emission (FE) peak, respectively. For variable temperature sample, the change in the growth temperature of the barrier and well layers in each period could transform the morphology to a step-flow -mode surface, thus eliminating the localized states in MQWs. It could be seen that the variable temperature growth method was superior to the constant temperature method, the surface morphology, optical char-acteristics and crystal quality were all improved. This study will provide technical support for optimizing the device performance of InGaAs/GaAs MQWs with high indium content.(c) 2022 Elsevier B.V. All rights reserved.
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China

Fan, Jie
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China

Shi, Linlin
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China

Xu, Li
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China

Lin, Fengyuan
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China

Fang, Dan
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China

Ma, Xiaohui
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Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China