Effect of annealing temperature on the energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films prepared by sol-gel method

Ferroelectric thin films of Ba(Zr0.35Ti0.65)O-3 (BZT35) were fabricated on Pt/Ti/SiO2/Si substrate by sol-gel method. Subsequent annealing treatments were carried out in an oxygen atmosphere at different temperatures. The study investigated how various annealing temperatures impacted the phase structure, surface topography, ferroelectric, and dielectric properties of the BZT35 films. According to XRD results, all the samples showed perovskite structure. With the gradual increase of temperature, the characteristic peak (110) intensity increases gradually. The BZT35 films annealed at 625 degrees C exhibited good energy storage properties (W-rec = 32.52 J/cm(3), eta = 89.4%), low leakage current density (J = 1.65 x 10(-4) A/cm(2)), and high breakdown field strength (E-BD = 3.57 MV/cm). This is due to the improved denseness and crystallinity of the film and the balance between polarization and breakdown strength. Moreover, the BZT35 film exhibits outstanding frequency stability (500 Hz-20 kHz) under annealing at 625 degrees C. The promising application of BZT35 in energy storage is suggested by its excellent properties.