Vertical Van Der Waals Epitaxy of p-MoxRe1-Xs2 on GaN for Ultrahigh Detectivity Uv-vis-NIR Photodetector

被引：6

作者：

Jiang, Zhongwei ^{[1
]}

Zhou, Jie ^{[1
]}

Li, Bo ^{[1
]}

Ma, Zhengweng ^{[1
]}

Huang, Zheng ^{[1
]}

Yang, Yongkai ^{[1
]}

Zhang, Yating ^{[1
]}

Huang, Yeying ^{[1
]}

Zhang, Huile ^{[1
]}

Fan, Kangkai ^{[1
]}

Li, Yu ^{[1
]}

Liu, Xinke ^{[1
]}

机构：

[1] Shenzhen Univ, Inst Microelect IME, Guangdong Res Ctr Interfacial Engn Funct Mat, Coll Mat Sci & Engn,Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China

来源：

ADVANCED OPTICAL MATERIALS | 2024年 / 12卷 / 12期

基金：

中国国家自然科学基金;

关键词：

band alignment; photodetector; vertical vdW epitaxy; HETEROSTRUCTURES; HETEROJUNCTION; SEMICONDUCTOR; INTEGRATION; MOS2; GROWTH;

D O I：

10.1002/adom.202302613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

van der Waals (vdW) heterogeneous integration and doping engineering have emerged as crucial factors in advancing the development of functional device systems. This work presents a fully vertical 2D/3D vdW stacking p-MoxRe1-xS2/GaN (x = 0.10 +/- 0.02) heterojunction photodetector, integrating multiple strategies for enhanced performance, such as mixed-dimensional stacking, p-type doping, vertical device design, and type-II band alignment. By integrating horizontal, vertical, and quasi-vertical devices on a Free-standing (FS)-GaN substrate, the vertical p-MoxRe1-xS2/GaN device demonstrates superior performance, including high I-light/I-dark ratio (1.48 x 10(6)), large Responsivity (888.69 AW(-1)), high specific detectivity (D*) (6.13 x 10(14) Jones), and fast response speed (rise/decay time of 181 ms/259 ms). Moreover, the spectral response encompasses the ultraviolet (UV), visible, and near-infrared (NIR) regions through energy band integration and bandgap modulation. This design surpasses previous devices, highlighting the potential of highly sensitive and micro-integrated optoelectronic devices enabled by vertical vdW heterogeneous integration.

引用

页数：13

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