Vertical Van Der Waals Epitaxy of p-MoxRe1-Xs2 on GaN for Ultrahigh Detectivity Uv-vis-NIR Photodetector

被引:8
作者
Jiang, Zhongwei [1 ]
Zhou, Jie [1 ]
Li, Bo [1 ]
Ma, Zhengweng [1 ]
Huang, Zheng [1 ]
Yang, Yongkai [1 ]
Zhang, Yating [1 ]
Huang, Yeying [1 ]
Zhang, Huile [1 ]
Fan, Kangkai [1 ]
Li, Yu [1 ]
Liu, Xinke [1 ]
机构
[1] Shenzhen Univ, Inst Microelect IME, Guangdong Res Ctr Interfacial Engn Funct Mat, Coll Mat Sci & Engn,Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
band alignment; photodetector; vertical vdW epitaxy; HETEROSTRUCTURES; HETEROJUNCTION; SEMICONDUCTOR; INTEGRATION; MOS2; GROWTH;
D O I
10.1002/adom.202302613
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
van der Waals (vdW) heterogeneous integration and doping engineering have emerged as crucial factors in advancing the development of functional device systems. This work presents a fully vertical 2D/3D vdW stacking p-MoxRe1-xS2/GaN (x = 0.10 +/- 0.02) heterojunction photodetector, integrating multiple strategies for enhanced performance, such as mixed-dimensional stacking, p-type doping, vertical device design, and type-II band alignment. By integrating horizontal, vertical, and quasi-vertical devices on a Free-standing (FS)-GaN substrate, the vertical p-MoxRe1-xS2/GaN device demonstrates superior performance, including high I-light/I-dark ratio (1.48 x 10(6)), large Responsivity (888.69 AW(-1)), high specific detectivity (D*) (6.13 x 10(14) Jones), and fast response speed (rise/decay time of 181 ms/259 ms). Moreover, the spectral response encompasses the ultraviolet (UV), visible, and near-infrared (NIR) regions through energy band integration and bandgap modulation. This design surpasses previous devices, highlighting the potential of highly sensitive and micro-integrated optoelectronic devices enabled by vertical vdW heterogeneous integration.
引用
收藏
页数:13
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