Vertical Van Der Waals Epitaxy of p-MoxRe1-Xs2 on GaN for Ultrahigh Detectivity Uv-vis-NIR Photodetector

van der Waals (vdW) heterogeneous integration and doping engineering have emerged as crucial factors in advancing the development of functional device systems. This work presents a fully vertical 2D/3D vdW stacking p-MoxRe1-xS2/GaN (x = 0.10 +/- 0.02) heterojunction photodetector, integrating multiple strategies for enhanced performance, such as mixed-dimensional stacking, p-type doping, vertical device design, and type-II band alignment. By integrating horizontal, vertical, and quasi-vertical devices on a Free-standing (FS)-GaN substrate, the vertical p-MoxRe1-xS2/GaN device demonstrates superior performance, including high I-light/I-dark ratio (1.48 x 10(6)), large Responsivity (888.69 AW(-1)), high specific detectivity (D*) (6.13 x 10(14) Jones), and fast response speed (rise/decay time of 181 ms/259 ms). Moreover, the spectral response encompasses the ultraviolet (UV), visible, and near-infrared (NIR) regions through energy band integration and bandgap modulation. This design surpasses previous devices, highlighting the potential of highly sensitive and micro-integrated optoelectronic devices enabled by vertical vdW heterogeneous integration.