Blue LED (InGaN)-driven yellow and red emitting phosphor for white light generation

被引：6

作者：

Baheti, Pratik D. ^{[1
]}

Talewar, Rupesh A. ^{[2
]}

Moharil, S. V. ^{[3
]}

机构：

[1] Birla Inst Technol & Sci BITS Pilani, Dept Elect & Elect Engn, Pilani 333031, India

[2] Shri Ramdeobaba Coll Engn & Management, Dept Phys, Katol Rd, Nagpur 440013, India

[3] Rashtrasant Tukadoji Maharaj Nagpur Univ, Dept Phys, Nagpur 440010, India

来源：

MATERIALS LETTERS | 2023年 / 348卷

关键词：

White; -LED; Luminescence; Phosphor; LED fabrication; LUMINESCENCE PROPERTIES; LUMINOUS EFFICIENCY; K2SIF6MN4+; DIODES;

D O I：

10.1016/j.matlet.2023.134727

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phosphor converted white LED using a yellow and red emitting material is investigated. For this we prepare K2SiF6:Mn4+ as red emitting phosphor via wet chemical technique. The white LED (w-LED) fabricated using blue InGaN LED chip (CREE 460 nm) coated with Y3Al5O12:Ce3+ and K2SiF6:Mn4+ phosphor. The effect of K2SiF6: Mn4+ phosphor as red emitting material in combination with blue InGaN LED chip (CREE 460 nm) coated with Y3Al5O12:Ce3+ phosphor is also investigated. The Commission International de I'Eclairage (CIE) coordinates and color rendering index (CRI) were also studied as a function of K2SiF6:Mn4+ content. The w-LED fabricated using blue InGaN LED chip (CREE 460 nm) coated with Y3Al5O12:Ce3+ and K2SiF6:Mn4+ phosphor shows a CIE value (x = 0.31, y = 0.33) with 78.1 CRI.

引用

页数：3

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