Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators

被引：1

作者：

Inac, Mesut ^{[1
,2
]}

Korndoerfer, Falk ^{[1
]}

Gerfers, Friedel ^{[2
]}

Malignaggi, Andrea ^{[1
]}

机构：

[1] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Germany

[2] Tech Univ Berlin, Berlin, Germany

来源：

2023 IEEE 23RD TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS | 2023年

关键词：

BiCMOS; broadband; distributed; driver; efficient; optical communication; quasi-off state; traveling wave;

D O I：

10.1109/SiRF56960.2023.10046248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a highly efficient linear traveling wave amplifier enabling beyond 100 GBaud optical data communication is presented, utilizing the "quasi-off" states approach to decrease the overall power consumption maintaining a high bandwidth. The circuit is designed in a SiGe BiCMOS technology featuring 15.3 dB small signal gain within a 87.4 GHz 3 dB bandwidth, while the 1 dB output compression point reaches 13.3dBm for a power efficiency of 4.1%. Time domain measurements demonstrate a non-return-to-zero transmission data rate of 120 Gb/s. The amplifier consumes an overall DC power of 499mW at maximum gain state, and the "quasi-off" states approach enables a power saving up to 50% without deteriorating the bandwidth.

引用

页码：58 / 61

页数：4

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