Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics

被引：19

作者：

Ogura, Hiroto ^{[1
]}

Kawasaki, Seiya ^{[1
]}

Liu, Zheng ^{[2
]}

Endo, Takahiko ^{[1
]}

Maruyama, Mina ^{[3
]}

Gao, Yanlin ^{[3
]}

Nakanishi, Yusuke ^{[1
]}

Lim, Hong En ^{[4
]}

Yanagi, Kazuhiro ^{[1
]}

Irisawa, Toshifumi ^{[5
]}

Ueno, Keiji ^{[4
]}

Okada, Susumu ^{[3
]}

Nagashio, Kosuke ^{[6
]}

Miyata, Yasumitsu ^{[1
]}

机构：

[1] Tokyo Metropolitan Univ, Dept Phys, Hachioji 1920397, Japan

[2] Natl Inst Adv Ind Sci & Technol, Innovat Funct Mat Res Inst, Nagoya 4638560, Japan

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Dept Phys, Tsukuba 3058571, Japan

[4] Saitama Univ, Dept Chem, Saitama 3388570, Japan

[5] Natl Inst Adv Ind Sci & Technol, Device Technol Res Inst, Tsukuba 3058568, Japan

[6] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

ACS NANO | 2023年 / 17卷 / 07期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

transition metal dichalcogenides; in-plane heterostructures; chemical vapor deposition; degenerate doping; band-to-band tunneling; negative differential resistance; broken gap band alignment; EPITAXIAL-GROWTH; MOS2; HETEROJUNCTIONS; TRANSISTORS; DISULFIDE; DIODES;

D O I：

10.1021/acsnano.2c11927

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS2 from the edges of mechanically exfoliated multilayer flakes of WSe2 or NbxMo1-xS2. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS2 on the exfoliated flakes. For the WSe2/MoS2 sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the NbxMo1-xS2/MoS2 in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS2. The formation of a staggered gap band alignment of NbxMo1-xS2/MoS2 is also supported by first-principles calculations.

引用

页码：6545 / 6554

页数：10

共 80 条

[1] Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation [J].