Significant Improvement in Wear Resistance of CoCrFeNi High-Entropy Alloy via Boron Doping

被引:5
作者
Zhang, Haitao [1 ]
Miao, Junwei [1 ]
Wang, Chenglin [2 ]
Li, Tingju [1 ]
Zou, Longjiang [1 ]
Lu, Yiping [1 ,3 ]
机构
[1] Dalian Univ Technol, Engn Res Ctr High Entropy Alloy Mat Liaoning Prov, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[2] Nanjing Technol Univ, Key Lab Light Weight Mat, Nanjing 210009, Peoples R China
[3] Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
boron doping; deformation mechanism; high-entropy alloys; nanostructured mixing layer; wear resistance; STACKING-FAULT ENERGY; MECHANICAL-PROPERTIES; TRIBOLOGICAL PERFORMANCE; MICROSTRUCTURE; BEHAVIOR; DEFORMATION; COMPOSITES; METALS;
D O I
10.3390/lubricants11090386
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
CoCrFeNi high-entropy alloy (HEA) exhibits excellent mechanical properties but relatively poor wear resistance. In particular, when the load reaches a certain level and the deformation mechanism of the CoCrFeNi HEA changes, the formation of shear bands leads to a significant increase in wear rate. Although numerous studies have been conducted on alloying strategies to improve the wear resistance of alloys, there is still limited research on the influence of deformation mechanism adjustment on wear resistance. Therefore, in order to fill this research gap, this study aims to use boron doping to regulate the deformation mechanism and successfully improve the wear resistance of CoCrFeNi HEA by 35 times. By observing the subsurface microstructure, the mechanism behind the significant improvement in wear resistance was further revealed. The results indicate that the reduction of shear bands and the formation of nanostructured mixed layers significantly improve wear resistance. The proposed strategy of boron doping to change the deformation mechanism and improve wear resistance is expected to provide new enlightenment for the development of wear-resistant HEAs.
引用
收藏
页数:12
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