Interfacial π-p Electron Coupling Prompts Hydrogen Evolution Reaction Activity in Acidic Electrolyte

被引:3
|
作者
Jiang, Binbin [1 ]
Chen, Zhiqiang [2 ,3 ]
Zhao, Hui [1 ]
Xiao, Han [1 ]
Wang, Tao [1 ]
Zhou, Le [1 ]
Wu, Xia [1 ]
Wang, Xie [1 ]
Pang, Tao [1 ]
Wang, Zhuqing [1 ]
Wang, Junwei [1 ]
Wu, Konglin [4 ]
机构
[1] Anqing Normal Univ, Sch Chem & Chem Engn, Anhui Prov Key Lab Funct Coordinat Cpds & Nanomat, Anqing 246001, Peoples R China
[2] Beijing Inst Aerosp Testing Technol, Beijing Key Lab Res & Applicat Aerosp Green Propel, Beijing 100074, Peoples R China
[3] Beijing Inst Aerosp Testing Technol, Aerosp Liquid Propellant Res Ctr, Beijing 100074, Peoples R China
[4] Anhui Univ Technol, Inst Clean Energy & Adv Nanocatalysis iClean, Sch Chem & Chem Engn, Maanshan 243032, Peoples R China
基金
中国国家自然科学基金;
关键词
PHASE; TRANSITION; SE;
D O I
10.1021/acs.inorgchem.4c00066
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The thermodynamically stable 2H-phase MoS2 is a brilliant material toward hydrogen evolution reaction (HER) owing to its excellent Gibbs free energy of hydrogen adsorption. Nevertheless, the poor intrinsic properties of 2H-MoS2 limit its electrocatalytic performances toward HER. In this work, graphitic carbon nitride covalently bridging 2H-MoS2 (MoS2/GCN) is proposed to construct robust HER electrocatalysts. The strong pi-p electron coupling between the delocalized pi electrons of GCN and the localized p electrons of S atoms sufficiently expose active sites and accelerate the reaction kinetics. To be specific, MoS2/GCN exhibits remarkable HER activity (160 mV at 10 mA<middle dot>cm(-2)) and long-term durability. Importantly, MoS2/GCN also provides great potential for industrial application. Density functional theory (DFT) calculations disclose that the pi-p electron coupling at the MoS2/GCN interface regulates the electronic structure of S atoms, consequently providing enhanced HER performance. This work presents a feasible pathway to develop advanced electrocatalysts for energy conversions.
引用
收藏
页码:3992 / 3999
页数:8
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