Tunable valley polarization and magneto-crystal anisotropy in two-dimensional VI3/WSe2 Van der Waals heterostructure

被引:0
作者
Li, Zefang [1 ,2 ,3 ,4 ]
Wu, Huifang [1 ,2 ,3 ,4 ]
An, Yukai [1 ,2 ,3 ,4 ]
机构
[1] Tianjin Univ Technol, Key Lab Display Mat & Photoelect Devices, Minist Educ, Tianjin 300384, Peoples R China
[2] Tianjin Univ Technol, Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China
[3] Tianjin Univ Technol, Natl Demonstrat Ctr Expt Funct Mat Educ, Tianjin 300384, Peoples R China
[4] Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2024年 / 38卷 / 22期
关键词
VI3/WSe2; heterostructure; valleytronics; interlayer space; strain; MONOLAYER;
D O I
10.1142/S0217979224502977
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, the effects of magnetic proximity coupling on electronic structures, valley polarization and magneto-crystal anisotropy of VI3/WSe2 heterostructure are studied in detail based on density functional theory. The results show that the spin-valley polarization characters of WSe2 monolayer can be induced by the proximity effect of ferromagnetic VI3 monolayer. Based on the effective Hamiltonian k center dot p model, a large valley polarization of 8.7meV is observed, which is mainly contributed by the SOC effect and not magnetic exchange field. Meanwhile, the magneto-crystal anisotropy of VI3 layer is also obviously altered from the [100] to [001] magnetic axis compared to the isolated VI3 monolayer. The reduction in the interlayer space strengths the W-V atomic coupling, resulting in a significant increase in the spin and valley polarization. Compression strain shows weakening effect on the valley polarization, while the tensile strain largely enhances the valley polarization of VI3/WSe2 heterostructure, which can reach the maximum value of 29.1meV at the tensile strain of 8%. The V spin direction (theta) has significant effect on valley polarization of WSe2 layer, which is positively correlated with the magnetization strength of V atom in the vertical direction. Furthermore, constructing the VI3/WSe2/VI3 sandwich heterostructure can induce a larger valley polarization, which can reach a maximum value of 32.4meV. These results indicate that the VI3/WSe2 heterostructure is a potential candidate for valleytronics.
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页数:18
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