High field dielectric response in κ-Ga2O3 films

被引：3

作者：

He, Fan ^{[1
]}

Jiang, Kunyao ^{[2
]}

Choi, Yeseul ^{[1
]}

Aronson, Benjamin L. ^{[1
]}

Shetty, Smitha ^{[1
]}

Tang, Jingyu ^{[2
]}

Liu, Bangzhi ^{[1
]}

Liu, Yongtao ^{[3
]}

Kelley, Kyle P. ^{[3
]}

Rayner Jr, Gilbert B. ^{[6
]}

Davis, Robert F. ^{[2
,5
]}

Porter, Lisa M. ^{[2
]}

Trolier-McKinstry, Susan ^{[1
,4
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[3] Oak Ridge Natl Lab, Ctr Nanoscale Mat Sci, Oak Ridge, TN 37831 USA

[4] Penn State Univ, Mat Sci & Engn Dept, University Pk, PA 16802 USA

[5] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[6] Kurt J Lesker Co, 1925 PA-51, Jefferson Hills, PA 15025 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2023年 / 134卷 / 20期

关键词：

SCHOTTKY-BARRIER DIODES; FERROELECTRIC PROPERTIES; OPTICAL-PROPERTIES; GA2O3; FILMS; EPSILON-GA2O3; GROWTH; OXIDE;

D O I：

10.1063/5.0169420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

kappa-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of kappa-Ga2O3 and beta-Ga2O3 had a relative permittivity of similar to 27, a loss tangent below 2%, and high electrical resistivity up to similar to 1.5 MV/cm. 700 nm thick MOCVD films with predominantly the kappa-Ga2O3 phase had relative permittivities of similar to 18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare kappa-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

引用

页数：9

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