Effects of two strategies on afterglow behavior of Lu2O3:Eu single crystal scintillator: Co-doping with Pr3+and solid solution with Sc2O3*

被引:13
作者
Xue, Zhongjun [1 ,2 ]
Ding, Dongzhou [2 ,3 ]
Sima, Yating [2 ,4 ]
Zhou, Zuyao [1 ]
Dong, Hanrui [1 ]
Zhao, Shuwen [2 ]
Feng, He [1 ]
机构
[1] Shanghai Univ, Sch Mat & Engn, Shanghai 200444, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201899, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] Shanghai Univ Elect Power, Sch Environm & Chem Engn, Shanghai 201306, Peoples R China
基金
中国国家自然科学基金;
关键词
Afterglow behavior; Pr3+co-doping; Rare earths; Eu; ENERGY-TRANSFER; LUMINESCENT PROPERTIES; TRAP STATES; EU3+ IONS; GROWTH; SITES;
D O I
10.1016/j.jre.2022.03.012
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
In this paper, effect of two strategies on afterglow behavior of Lu2O3:Eu single crystal scintillator, Pr3+ co-doping and solid solution with Sc2O3, were studied systematically. Two groups of Lu2O3:5 at%Eu,x at%Pr (x = 0, 0.2, 0.5,1, 2 and 5) and (Lu1_yScy)2O3:5 at%Eu (y = 0, 20 at%, 50 at% and 70 at%) single crystals were grown by floating zone (FZ) method in air atmosphere. The structures of as-grown crystals were determined by X-ray diffraction (XRD). The scintillation, photoluminescence properties and carrier trap states were investigated through afterglow, X-ray excitation luminescence (XEL), transmittance, photo-luminescence excitation (PLE) and photoluminescence (PL), PL decay and thermal stimulated lumines-cence (TSL) curves. It is found that with the increase of Pr3+ concentration, the afterglow level of the system decreases at the expense of scintillation luminescence efficiency. Meanwhile, although Sc2O3:Eu presents much lower afterglow intensity than Lu2O3:Eu, the addition of Sc2O3 will just increase the afterglow level of the (Lu1_yScy)2O3:5 at%Eu single crystal system. Possible mechanisms for above phe-nomena are discussed based on experimental results. (c) 2022 Chinese Society of Rare Earths. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:658 / 665
页数:8
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