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Perovskite-Nanowire-Array-Based Continuous-State Programmable Artificial Synapse for Neuromorphic Computing
被引:0
|作者:
Zhang, Yuting
[1
]
Ma, Zichao
[1
,2
]
Chen, Zhesi
[1
]
Poddar, Swapnadeep
[1
]
Zhu, Yudong
[1
,3
]
Han, Bing
[3
]
Chan, Chak Lam Jonathan
[1
]
Ding, Yucheng
[1
]
Kong, Xiangpeng
[4
]
Fan, Zhiyong
[1
,5
,6
,7
]
机构:
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Clear Water Bay, Hong Kong, Peoples R China
[2] South China Univ Technol, Sch Microelect, 777 Xingye Ave, Guangzhou 511442, Guangdong, Peoples R China
[3] Southern Univ Sci & Technol, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
[4] Shandong Inst Prod Qual Inspection, Jinan 250100, Shandong, Peoples R China
[5] HKUST, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Clear Water Bay, Hong Kong, Peoples R China
[6] Hong Kong Univ Sci & Technol, Dept Chem & Biol Engn, Clear Water Bay, Hong Kong, Peoples R China
[7] Shanghai Artificial Intelligence Lab, Shanghai, Peoples R China
关键词:
artificial synapses;
nonvolatile multistates;
perovskite memristors;
vertical nanowires array;
RESISTIVE MEMORY;
SINGLE-CRYSTALS;
HIGH-EFFICIENCY;
CLASSIFICATION;
MEMRISTORS;
STABILITY;
DEVICE;
LAYER;
D O I:
10.1002/aisy.202300586
中图分类号:
TP [自动化技术、计算机技术];
学科分类号:
0812 ;
摘要:
Perovskite-based memristors with tunable nonvolatile states are developed to mimic the synaptic interconnects of biological nervous systems and map neuromorphic computing networks to integrated circuits. To emulate the plasticity of synaptic structures, memristors with robust multilevel resistive states are fabricated in this work using high-density polycrystalline MAPbCl(3) nanowires (NWs) array that vertically integrated using solution method. In particular, the fabricated memristors exhibit both short- and long-term plasticity and traits akin to biological synapses. A fabricated memristor device is precisely programmed to 18 resistive states and each state exhibits stable data retention of more than 100 000 s. Furthermore, a matrix processing unit using a 4-by-4 memristor array is fabricated as the hardware core of an encoder-decoder artificial neural network to demonstrate high accuracy and reliable in-image font conversion. The resistive states of the 16 memristors are precisely programmed to the corresponding resistance values for specific synaptic weights of the artificial-neural-network-trained offline. In addition, experimental characterization and first-principles simulations attribute the continuous programmability and high reliability features of the memristors to the confinement mechanisms of the horizontal grain-boundary structure in polycrystalline perovskite NWs.
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