Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

被引：11

作者：

Cho, Jung Woo ^{[1
]}

Song, Myeong Seop ^{[1
]}

Choi, In Hyeok ^{[2
]}

Go, Kyoung-June ^{[3
]}

Han, Jaewoo ^{[4
]}

Lee, Tae Yoon ^{[1
]}

An, Chihwan ^{[1
]}

Choi, Hyung-Jin ^{[5
]}

Sohn, Changhee ^{[4
]}

Park, Min Hyuk ^{[6
]}

Baek, Seung-Hyub ^{[5
,7
]}

Lee, Jong Seok ^{[2
]}

Choi, Si-Young ^{[3
,8
,9
]}

Chae, Seung Chul ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys Educ, Seoul 08826, South Korea

[2] Gwangju Inst Sci & Technol GIST, Dept Phys & Photon Sci, Gwangju 61005, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea

[4] Ulsan Natl Inst Sci & Technol, Dept Phys, Ulsan 44919, South Korea

[5] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 02792, South Korea

[6] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

[7] Korea Univ Sci & Technol, KIST Sch, Div Nano & Informat Technol, Seoul 02792, South Korea

[8] Inst Basic Sci IBS, Ctr Van der Waals Quantum Solids, Pohang 37673, South Korea

[9] Pohang Univ Sci & Technol POSTECH, Dept Semicond Engn, Pohang 37673, South Korea

来源：

ADVANCED FUNCTIONAL MATERIALS | 2024年 / 34卷 / 24期

基金：

新加坡国家研究基金会;

关键词：

atomic layer deposition; epitaxial growth; ferroelectricity; HfO2; YTTRIA-STABILIZED ZIRCONIA; GROWTH;

D O I：

10.1002/adfm.202314396

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The groundbreaking discovery of unconventional ferroelectricity in HfO2 opens exciting prospects for next-generation memory devices. However, the practical implementation, particularly its epitaxial stabilization and a clearer understanding of its intrinsic ferroelectricity has been a significant challenge. The study arouses the potential importance of atomic layer deposition (ALD) for mass production in modern industries, demonstrating its proficiency in achieving epitaxial growth of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films on Yttria-stabilized zirconia (YSZ) substrates. Moreover, with distinct ferroelectric switching currents, the work reveals the ferroelectric characteristics of epitaxial HZO thin films deposited through ALD on YSZ-buffered Si substrates, which aligns well with CMOS technology. Overall, the results pave the way for a scalable synthesis system for ferroelectric HfO2-based materials, hinting at a bright future for low-temperature epitaxial nanoelectronics.

引用

页数：10

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