Two-Dimensional Silver-Chalcogenolate-Based Cluster-Assembled Material: A p-type Semiconductor

被引:13
作者
Das, Anish Kumar [1 ]
Biswas, Sourav [1 ]
Kayal, Arijit [2 ]
Reber, Arthur C. [3 ]
Bhandary, Subhrajyoti [1 ]
Chopra, Deepak [4 ]
Mitra, Joy [2 ]
Khanna, Shiv N. [3 ]
Mandal, Sukhendu [1 ]
机构
[1] Indian Inst Sci Educ & Res Thiruvananthapuram, Sch Chem, Thiruvananthapuram 695551, Kerala, India
[2] Indian Inst Sci Educ & Res Thiruvananthapuram, Sch Phys, Thiruvananthapuram 695551, Kerala, India
[3] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23220 USA
[4] Indian Inst Sci Educ & Res, Dept Chem, Bhopal 462066, Madhya Pradesh, India
关键词
2D Single Layer; Cluster-Assembled Material; Field Effect; Nanocluster; Silver; FIELD-EFFECT TRANSISTORS; SINGLE-LAYER; ELECTRICAL-PROPERTIES; MOS2; NANOPARTICLES; NANOCLUSTERS; RESISTANCE; PROSPECTS;
D O I
10.1021/acs.nanolett.3c02269
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have synthesized and characterized a new two-dimensional honeycomb architecture resembling a single-layer of atomically precise silver cluster-assembled material (CAM), [Ag-12((SBu)-Bu-t)(6)(CF3COO)(6)(4,4'-azopyridine)(3)] (Ag-12-azo-bpy). The interlayer noncovalent van der Waals interactions within the single-crystals were successfully disrupted, leading to the creation of this unique structure. The optimized Ag-12-azo-bpy CAM demonstrates a valence band that is localized on the Ag-12 cluster node situated near the Fermi energy level. This localization induces electron injection from the linker to the cluster node, facilitating efficient charge transportation along the plane. Exploiting this single-layer structure as a distinctive platform for p-type channel material, it was employed in a field-effect transistor configuration. Remarkably, the transistor exhibits a high hole mobility of 1.215 cm(2) V-1 s(-1) and an impressive ON/OFF current ratio of similar to 4500 at room-temperature.
引用
收藏
页码:8923 / 8931
页数:9
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